IXTH26N60P IXYS, IXTH26N60P Datasheet - Page 4

• Manufacturer Part Number: IXTH26N60P
• Description: MOSFET N-CH 600V 26A TO-247
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTH26N60P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 26A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 4150pF @ 25V
• Power - Max: 460W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.27 Ohms
• Forward Transconductance Gfs (max / Min): 26 s
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 26 A
• Power Dissipation: 460 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 26
• Rds(on), Max, Tj=25°c, (?): 0.27
• Ciss, Typ, (pf): 4150
• Qg, Typ, (nc): 72
• Trr, Typ, (ns): 500
• Pd, (w): 460
• Rthjc, Max, (k/w): 0.27
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
10000
1000
100
1.00
0.10
0.01
10
80
70
60
50
40
30
20
10
0
0.00001
0.4
0
f = 1MHz
5
0.5
T
Fig. 11. Capacitance
Fig. 9. Source Current vs.
J
Source-To-Drain Voltage
= 125
10
0.6
C rss
º
0.0001
15
C
V
V
C oss
S D
0.7
D S
C iss
- Volts
20
- Volts
Fig. 12. M axim um Trans ie nt The rm al Re s is tance
0.8
25
T
J
0.9
= 25
30
0.001
º
C
1
35
Pulse Width - Seconds
1.1
40
IXTT26N60P
0.01
10
9
8
7
6
5
4
3
2
1
0
0
V
I
I
D
G
DS
10
IXTH26N60P
IXTV26N60P IXTV26N60PS
= 13A
= 10mA
= 300V
0.1
Fig. 10. Gate Charge
20
Q
G
30
- nanoCoulombs
40
1
50
IXTQ26N60P
60
70
10
80