IXTH26N60P IXYS, IXTH26N60P Datasheet - Page 5

• Manufacturer Part Number: IXTH26N60P
• Description: MOSFET N-CH 600V 26A TO-247
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXTH26N60P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 270 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 26A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 72nC @ 10V
• Input Capacitance (ciss) @ Vds: 4150pF @ 25V
• Power - Max: 460W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.27 Ohms
• Forward Transconductance Gfs (max / Min): 26 s
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 26 A
• Power Dissipation: 460 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 600
• Id(cont), Tc=25°c, (a): 26
• Rds(on), Max, Tj=25°c, (?): 0.27
• Ciss, Typ, (pf): 4150
• Qg, Typ, (nc): 72
• Trr, Typ, (ns): 500
• Pd, (w): 460
• Rthjc, Max, (k/w): 0.27
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2006 IXYS All rights reserved
TO-247 (IXTH) Outline
PLUS220 (IXTV) Outline
Terminals: 1 - Gate
Dim.
A
A
A
b
b
b
C
D
E
e
L
L1
∅P
Q
R
1
2
1
2
20.80
15.75
19.81
1.65
2.87
5.20
3.55
5.89
4.32
Min.
Millimeter
4.7
2.2
2.2
1.0
1
.4
2
21.46
16.26
20.32
Max.
2.54
2.13
3.12
5.72
4.50
3.65
6.40
5.49
3
5.3
2.6
1.4
.8
0.205 0.225
0.232 0.252
.185
.087
.059
.040
.065
.113
.016
.819
.610
.780
.140
.170
Min.
2 - Drain
Inches
Max.
.209
.102
.098
.055
.084
.123
.031
.845
.640
.800
.177
.144
.216
TO-3P (IXTQ) Outline
PLUS220SMD (IXFV_S) Outline
IXTT26N60P
IXTH26N60P
IXTV26N60P IXTV26N60PS
TO-268 (IXTT) Outline
IXTQ26N60P