STW90NF20 STMicroelectronics, STW90NF20 Datasheet

MOSFET N-CH 200V 83A TO-247

STW90NF20

Manufacturer Part Number
STW90NF20
Description
MOSFET N-CH 200V 83A TO-247
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet

Specifications of STW90NF20

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
23 mOhm @ 45A, 10V
Drain To Source Voltage (vdss)
200V
Current - Continuous Drain (id) @ 25° C
83A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
164nC @ 10V
Input Capacitance (ciss) @ Vds
5736pF @ 25V
Power - Max
300W
Mounting Type
Through Hole
Package / Case
TO-247-3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.023 Ohm @ 10 V
Drain-source Breakdown Voltage
200 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
83 A
Power Dissipation
300 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-8464-5

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STW90NF20
Manufacturer:
ST
0
Part Number:
STW90NF20
Manufacturer:
ST
Quantity:
20 000
Features
Application
Description
This Power MOSFET series realized with
STMicroelectronics unique STripFET™ process
has specifically been designed to minimize input
capacitance and gate charge. It is therefore
suitable as primary switch in advanced high-
efficiency isolated DC-DC converters
August 2008
Table 1.
Exceptional dv/dt capability
Low gate charge
100% Avalanche tested
Switching applications
STW90NF20
Type
STW90NF20
Order code
Device summary
200 V
V
DSS
< 0.023 Ω
R
max
DS(on)
low gate charge STripFET™ Power MOSFET
Marking
90NF20
N-channel 200 V, 0.019 Ω, 83 A, TO-247
83 A
I
D
Rev 2
Figure 1.
Package
TO-247
Internal schematic diagram
TO-247
STW90NF20
1
2
Packaging
3
Tube
www.st.com
1/12
12

Related parts for STW90NF20

STW90NF20 Summary of contents

Page 1

... DC-DC converters Table 1. Device summary Order code STW90NF20 August 2008 N-channel 200 V, 0.019 Ω TO-247 low gate charge STripFET™ Power MOSFET R DS(on max < 0.023 Ω Figure 1. Marking 90NF20 Rev 2 STW90NF20 TO-247 Internal schematic diagram Package Packaging TO-247 Tube 1/12 www.st.com 12 ...

Page 2

... Contents Contents 1 Electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 Electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 Electrical characteristics (curves) 3 Test circuits 4 Package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 5 Revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 2/ STW90NF20 ...

Page 3

... STW90NF20 1 Electrical ratings Table 1. Absolute maximum ratings Symbol V Drain-source voltage ( Gate-source voltage GS I Drain current (continuous Drain current (continuous (1) I Drain current (pulsed) DM Derating factor P Total dissipation at T TOT (2) dv/dt Peak diode recovery voltage slope T Operating junction temperature J Tstg Storage temperature 1. Pulse width limited by safe operating area ≤ ...

Page 4

... Max rating Max rating @125 ° ± Parameter Test conditions MHz 160 MHz open drain V = 160 (see Figure 15) DSS STW90NF20 Min. Typ. Max 200 GS ±100 = 250 µ 0.018 0.023 D Min. Typ 5736 1126 196 = 0 687 GS 1 164 oss Unit V 1 µA 10 µA nA ...

Page 5

... STW90NF20 Table 6. Switching times Symbol t d(on) Turn-on delay time t Rise time r t Turn-off delay time d(off) Fall time t f Table 7. Source drain diode Symbol I Source-drain current SD (1) Source-drain current (pulsed) I SDM (2) Forward on voltage Reverse recovery time rr Q Reverse recovery charge rr Reverse recovery current ...

Page 6

... Figure 3. AM00876v1 10µs 100µs 1ms 10ms V (V) 100 DS Figure 5. AM00877v1 I (A) D 250 200 6V 150 100 ( temperature Figure 7. AM00879v1 R DS(on) (Ω) 0.0178 0.0174 0.0170 0.0166 0.0162 T (°C) 100 J STW90NF20 Thermal impedance Transfer characteristics Static drain-source on resistance I =45A AM00878v1 V (V) DS AM00880v1 I (A) D ...

Page 7

... STW90NF20 Figure 8. Gate charge vs gate-source voltage Figure (V) V =160V =83A D V =10V 100 Figure 10. Normalized gate threshold voltage vs temperature V GS(th) (norm) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0 -50 50 Figure 12. Source-drain diode forward characteristics V SD (V) 1.0 Tj=-50°C 0.9 0.8 0.7 Tj=25° ...

Page 8

... Test circuits Figure 14. Switching times test circuit for resistive load Figure 16. Test circuit for inductive load switching and diode recovery times Figure 18. Unclamped inductive waveform 8/12 Figure 15. Gate charge test circuit Figure 17. Unclamped inductive load test circuit Figure 19. Switching time waveform STW90NF20 ...

Page 9

... STW90NF20 4 Package mechanical data In order to meet environmental requirements, ST offers these devices in ECOPACK® packages. These packages have a Lead-free second level interconnect. The category of second level interconnect is marked on the package and on the inner box label, in compliance with JEDEC Standard JESD97. The maximum ratings related to soldering conditions are also marked on the inner box label ...

Page 10

... Package mechanical data Dim øP øR S 10/12 TO-247 Mechanical data mm. Min. Typ 4.85 2.20 1.0 2.0 3.0 0.40 19.85 15.45 5.45 14.20 3.70 18.50 3.55 4.50 5.50 STW90NF20 Max. 5.15 2.60 1.40 2.40 3.40 0.80 20.15 15.75 14.80 4.30 3.65 5.50 ...

Page 11

... STW90NF20 5 Revision history Table 8. Document revision history Date 28-Aug-2007 04-Aug-2008 Revision 1 First release 2 Document status promoted from preliminary data to datasheet. Revision history Changes 11/12 ...

Page 12

... Australia - Belgium - Brazil - Canada - China - Czech Republic - Finland - France - Germany - Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore - Spain - Sweden - Switzerland - United Kingdom - United States of America 12/12 Please Read Carefully: © 2008 STMicroelectronics - All rights reserved STMicroelectronics group of companies www.st.com STW90NF20 ...

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