STW90NF20 STMicroelectronics, STW90NF20 Datasheet - Page 7

• Manufacturer Part Number: STW90NF20
• Description: MOSFET N-CH 200V 83A TO-247
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STW90NF20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 23 mOhm @ 45A, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 83A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 164nC @ 10V
• Input Capacitance (ciss) @ Vds: 5736pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.023 Ohm @ 10 V
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 83 A
• Power Dissipation: 300 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8464-5

STW90NF20
Figure 8.
Figure 10. Normalized gate threshold voltage
Figure 12. Source-drain diode forward
V
(norm)
GS(th)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
V
V
(V)
0.9
0.8
0.7
1.0
0.6
0.5
(V)
10
GS
SD
0
4
2
8
6
0
0
0
-50
Tj=25°C
Tj=150°C
Gate charge vs gate-source voltage Figure 9.
vs temperature
characteristics
Tj=-50°C
10
V
V
50
DD
GS
I
D
0
=83A
=160V
=10V
30
100
50
50
150
I
V
100
D
GS
=250µA
=V
70
200
DS
T
Q
J
I
SD
(°C)
g
(nC)
(A)
AM00881v1
AM00883v1
AM00885v1
Figure 11. Normalized on resistance vs
Figure 13. Maximum avalanche energy vs
R
(norm)
DS(on)
10000
1000
E
(mJ)
2.5
2.0
1.5
350
300
250
200
150
1.0
0.5
400
100
(pF)
100
AS
0
50
C
10
0
0
0.1
10
-50
Capacitance variations
temperature
temperature
30
1
0
50
Electrical characteristics
70
50
10
90
100
110 130
100
Ciss
Coss
Crss
V
T
DS
J
(°C)
T
(V)
J
(°C)
AM00882v1
AM00884v1
AM00886v1
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