STW26NM60N STMicroelectronics, STW26NM60N Datasheet - Page 3

• Manufacturer Part Number: STW26NM60N
• Description: MOSFET N-CH 600V 20A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW26NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 165 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 50V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.135ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.135 Ohms
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 20 A
• Power Dissipation: 140 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-9066-5

STB26NM60N, STF26NM60N, STP26NM60N, STW26NM60N
1
Electrical ratings
Table 2.
1. Limited only by maximum temperature allowed
2. Pulse width limited by safe operating area
3. I
Table 3.
Table 4.
Symbol
Symbol
Symbol
dv/dt
R
R
R
I
DM
P
V
thj-case
thj-amb
V
E
V
T
thj-pcb
SD
I
I
I
TOT
AS
T
T
ISO
GS
DS
stg
AS
D
D
j
l
(2)
(3)
≤ 20 A, di/dt ≤ 400 A/µs, V
Avalanche current, repetitive or not-repetitive
(pulse width limited by Tj max)
Single pulse avalanche energy
(starting T
Drain-source voltage (V
Gate-source voltage
Drain current (continuous) at T
Drain current (continuous) at T
Drain current (pulsed)
Total dissipation at T
Derating factor
Peak diode recovery voltage slope
Insulation withstand voltage (RMS) from
all three leads to external heat sink
(t=1 s;T
Storage temperature
Max. operating junction temperature
Thermal resistance junction-case max
Thermal resistance junction-ambient max
Thermal resistance junction-pcb max
Maximum lead temperature for soldering
purpose
Absolute maximum ratings
Thermal data
Avalanche characteristics
C
=25 °C)
J
=25 °C, I
Parameter
Parameter
Parameter
D
DD
C
=I
Doc ID 15642 Rev 2
= 25 °C
AS
GS
≤ 80% V
, V
= 0)
DD
C
C
=50 V)
= 25 °C
= 100 °C
(BR)DSS
TO-247 TO-220 D²PAK TO-220FP
TO-220, D²PAK
50
TO-247,
12.6
1.12
140
20
80
62.5
0.89
–55 to 150
Value
Value
± 25
600
150
300
15
Value
30
610
8.5
TO-220FP
12.6
Electrical ratings
2500
20
80
0.24
30
(1)
(1)
(1)
4.17
62.5
V/ns
Unit
°C/W
°C/W
°C/W
Unit
Unit
°C
°C
mJ
W
°C
V
V
A
A
A
V
A
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