STW26NM60N STMicroelectronics, STW26NM60N Datasheet - Page 5

• Manufacturer Part Number: STW26NM60N
• Description: MOSFET N-CH 600V 20A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW26NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 165 mOhm @ 10A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 20A
• Vgs(th) (max) @ Id: 4V @ 250µA
• Gate Charge (qg) @ Vgs: 60nC @ 10V
• Input Capacitance (ciss) @ Vds: 1800pF @ 50V
• Power - Max: 140W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 20A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 0.135ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.135 Ohms
• Forward Transconductance Gfs (max / Min): 10 S
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 20 A
• Power Dissipation: 140 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-9066-5

STB26NM60N, STF26NM60N, STP26NM60N, STW26NM60N
Table 7.
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Symbol
Symbol
I
V
SDM
I
I
t
t
SD
RRM
RRM
I
d(on)
d(off)
Q
Q
SD
t
t
t
t
rr
rr
rr
rr
r
f
(2)
(1)
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Switching times
Source drain diode
Parameter
Parameter
Doc ID 15642 Rev 2
I
I
V
(see Figure 20)
I
V
(see Figure 20)
V
R
(see Figure 18)
SD
SD
SD
DD
DD
DD
G
= 4.7 Ω V
= 20 A, V
= 20 A, di/dt = 100 A/µs
= 20 A, di/dt = 100 A/µs
= 60 V
= 60 V, T
= 300 V, I
Test conditions
Test conditions
GS
GS
j
D
= 150 °C
= 10 A
= 0
= 10 V
Electrical characteristics
Min.
Min
-
-
-
-
-
Typ. Max
31.6
32.5
Typ. Max. Unit
370
450
5.8
7.5
13
25
85
50
1.5
20
80
-
Unit
µC
µC
ns
ns
ns
ns
ns
ns
A
A
V
A
A
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