STW29NK50Z STMicroelectronics, STW29NK50Z Datasheet - Page 3

• Manufacturer Part Number: STW29NK50Z
• Description: MOSFET N-CH 500V 31A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW29NK50Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 15.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 4.5V @ 150µA
• Gate Charge (qg) @ Vgs: 266nC @ 10V
• Input Capacitance (ciss) @ Vds: 6110pF @ 25V
• Power - Max: 350W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.13 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 24 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 31 A
• Power Dissipation: 350000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 15.5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 105mohm
• Rds(on) Test Voltage Vgs: 30V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4425-5

TABLE 7: ELECTRICAL CHARACTERISTICS (T
On /Off
Table 8: Dynamic
Table 9: Source Drain Diode
(1) Pulsed: Pulse duration = 300 µs, duty cycle 1.5 %.
(2) Pulse width limited by safe operating area.
V
Symbol
R
Symbol
Symbol
I
V
V
(BR)DSS
SDM
g
I
I
DS(on)
t
t
I
I
GS(th)
C
SD
C
DSS
GSS
C
d(on)
d(off)
Q
Q
fs
RRM
RRM
I
Q
Q
Q
SD
t
t
oss
t
t
rss
iss
rr
rr
gs
gd
r
f
(1)
g
rr
rr
(1)
(2)
Drain-source Breakdown
Voltage
Zero Gate Voltage
Drain Current (V
Gate-body Leakage
Current (V
Gate Threshold Voltage
Static Drain-source On
Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Turn-on Delay Time
Rise Time
Turn-off-Delay Time
Fall Time
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
Source-drain Current
Source-drain Current (pulsed)
Forward On Voltage
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Reverse Recovery Time
Reverse Recovery Charge
Reverse Recovery Current
Parameter
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
V
V
V
V
V
V
R
(Resistive Load see Figure 17)
V
V
D
I
I
V
(see test circuit Figure 5)
I
V
(see test circuit Figure 5)
DS
DS
GS
DS
GS
DS
DS
DD
DD
GS
SD
SD
SD
G
DD
DD
= 1 mA, V
= 4.7 Ω, V
= Max Rating
= Max Rating, T
= V
= 15 V, I
= 25 V, f = 1 MHz, V
= ± 20 V
= 10 V, I
= 250 V, I
= 400 V, I
= 10 V
= 31 A, V
= 30 A, di/dt = 100 A/µs
= 30 A, di/dt = 100 A/µs
= 44.8V, T
= 44.8V, T
Test Conditions
Test Conditions
GS
Test Conditions
CASE
, I
GS
D
D
D
GS
GS
D
D
= 150 µA
= 15.5 A
= 15.5 A
= 0
j
j
= 15 A,
= 30 A,
=25°C UNLESS OTHERWISE SPECIFIED)
= 10 V
= 25°C
= 150°C
= 0
C
= 125°C
GS
= 0
Min.
500
Min.
Min.
3
0.105
6110
Typ.
3.75
Typ.
44.5
35.5
Typ.
697
166
129
190
436
500
111
6.1
7.5
24
41
33
28
30
STW29NK50Z
Max.
Max.
Max.
± 10
0.13
266
124
4.5
1.6
50
31
1
Unit
Unit
Unit
nC
nC
nC
µC
µC
µA
µA
µA
pF
pF
pF
ns
ns
ns
ns
ns
ns
S
V
Ω
S
A
A
V
A
A
3/10