STW29NK50Z STMicroelectronics, STW29NK50Z Datasheet - Page 4

• Manufacturer Part Number: STW29NK50Z
• Description: MOSFET N-CH 500V 31A TO-247
• Manufacturer: STMicroelectronics
• Series: SuperMESH™r

Specifications of STW29NK50Z

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 130 mOhm @ 15.5A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 31A
• Vgs(th) (max) @ Id: 4.5V @ 150µA
• Gate Charge (qg) @ Vgs: 266nC @ 10V
• Input Capacitance (ciss) @ Vds: 6110pF @ 25V
• Power - Max: 350W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.13 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 24 S
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 31 A
• Power Dissipation: 350000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 15.5A
• Drain Source Voltage Vds: 500V
• On Resistance Rds(on): 105mohm
• Rds(on) Test Voltage Vgs: 30V
• Threshold Voltage Vgs Typ: 3.75V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-4425-5

STW29NK50Z
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Figure 3: Safe Operating Area
Figure 4: Output Characteristics
Figure 5: Transconductance
Figure 6: Thermal Impedance
Figure 7: Transfer Characteristics
Figure 8: Static Drain-source On Resistance