IXFH50N20 IXYS, IXFH50N20 Datasheet - Page 4

• Manufacturer Part Number: IXFH50N20
• Description: MOSFET N-CH 200V 50A TO-247AD
• Manufacturer: IXYS
• Series: HiPerFET™r
• Type: Power MOSFETr

Specifications of IXFH50N20

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 45 mOhm @ 500mA, 10V
• Drain To Source Voltage (vdss): 200V
• Current - Continuous Drain (id) @ 25° C: 50A
• Vgs(th) (max) @ Id: 4V @ 4mA
• Gate Charge (qg) @ Vgs: 220nC @ 10V
• Input Capacitance (ciss) @ Vds: 4400pF @ 25V
• Power - Max: 300W
• Mounting Type: Through Hole
• Package / Case: TO-247AD
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 0.045Ohm
• Drain-source On-volt: 200V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 50A
• Power Dissipation: 300W
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-247AD
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.045 Ohms
• Forward Transconductance Gfs (max / Min): 32 s
• Drain-source Breakdown Voltage: 200 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 50 A
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 200
• Id(cont), Tc=25°c, (a): 50
• Rds(on), Max, Tj=25°c, (?): 0.045
• Ciss, Typ, (pf): 4400
• Qg, Typ, (nc): 190
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 298
• Rthjc, Max, (ºc/w): 0.42
• Package Style: TO-247
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

© 2000 IXYS All rights reserved
0.001
4500
4000
3500
3000
2500
2000
1500
1000
0.01
500
0.1
0.00001
14
12
10
8
6
4
2
0
0
0
0
Fig.7 Gate Charge Characteristic Curve
Fig.11 Transient Thermal Impedance
Fig.9 Capacitance Curves
D=0.2
D=0.1
D=0.01
D=0.5
D=0.05
D=0.02
V
I
I
Single Pulse
D
G
DS
= 50A
= 10mA
= 100V
25
5
Gate Charge - nCoulombs
50
75
0.0001
10
V
f = 1MHz
V
DS
DS
100 125 150 175 200
- Volts
= 25V
C
C
C
iss
oss
rss
15
20
0.001
IXFH/IXFM42N20
IXFH/IXFM50N20
25
Time - Seconds
0.01
100
10
50
40
30
20
10
1
0
0.4
Fig.8 Forward Bias Safe Operating Area
1
Fig.10 Source Current vs. Source
IXFH/IXFM58N20 IXFT50N20
Limited by R
0.1
0.6
T
to Drain Voltage
J
DS(on)
= 125°C
0.8
V
V
10
SD
DS
T
J
= 25°C
- Volts
- Volts
1
1.0
IXFT58N20
1.2
100
200
1.4
10
100µs
10µs
1ms
100ms
10ms
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