STW26NM50 STMicroelectronics, STW26NM50 Datasheet - Page 10

• Manufacturer Part Number: STW26NM50
• Description: MOSFET N-CH 500V 30A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW26NM50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 106nC @ 10V
• Input Capacitance (ciss) @ Vds: 3000pF @ 25V
• Power - Max: 313W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.12 Ohms @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 30 A
• Power Dissipation: 313000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3264-5

Package mechanical data
10/12
Dim.
øR
A1
øP
b1
b2
L1
L2
D
A
E
S
b
c
e
L
Doc ID 8291 Rev 11
19.85
15.45
14.20
TO-247 mechanical data
Min.
4.85
2.20
0.40
3.70
3.55
4.50
1.0
2.0
3.0
18.50
mm.
Typ.
5.45
5.50
20.15
15.75
14.80
Max.
5.15
2.60
1.40
2.40
3.40
0.80
4.30
3.65
5.50
STW26NM50