STW26NM50 STMicroelectronics, STW26NM50 Datasheet - Page 5

• Manufacturer Part Number: STW26NM50
• Description: MOSFET N-CH 500V 30A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW26NM50

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 120 mOhm @ 13A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 30A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 106nC @ 10V
• Input Capacitance (ciss) @ Vds: 3000pF @ 25V
• Power - Max: 313W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.12 Ohms @ 10 V
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 30 A
• Power Dissipation: 313000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3264-5

STW26NM50
Table 8.
1. Pulse width limited by safe operating area
2. Pulsed: pulse duration = 300 µs, duty cycle 1.5%
Table 9.
The built-in back-to-back Zener diodes have specifically been designed to enhance not only
the device’s ESD capability, but also to make them safely absorb possible voltage transients
that may occasionally be applied from gate to source. In this respect the Zener voltage is
appropriate to achieve an efficient and cost-effective intervention to protect the device’s
integrity. These integrated Zener diodes thus avoid the usage of external components.
Symbol
Symbol
I
BV
V
SDM
I
I
SD
RRM
RRM
I
Q
Q
SD
t
t
GSO
rr
rr
rr
rr
(2)
(1)
Gate-source breakdown
voltage
Source-drain current
Source-drain current (pulsed)
Forward on voltage
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Reverse recovery time
Reverse recovery charge
Reverse recovery current
Source drain diode
Gate-source Zener diode
Parameter
Parameter
Doc ID 8291 Rev 11
Igs=± 1 mA (open drain)
I
I
V
(see Figure 16)
I
V
(see Figure 16)
SD
SD
SD
DD
DD
= 26 A, V
= 26 A, di/dt = 100 A/µs
= 26 A, di/dt = 100 A/µs
= 100 V
= 100 V, T
Test conditions
Test conditions
GS
j
= 150 °C
= 0
Electrical characteristics
Min.
Min
30
-
-
-
-
Typ.
27.8
28.8
400
492
Typ.
5.5
7
-
Max
104
Max. Unit
1.5
26
-
Unit
µC
µC
ns
ns
A
A
V
A
A
5/12
V