STW43NM60N STMicroelectronics, STW43NM60N Datasheet - Page 11

• Manufacturer Part Number: STW43NM60N
• Description: MOSFET N-CH 600V 35A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW43NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 88 mOhm @ 17.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 4200pF @ 50V
• Power - Max: 255W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.088 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 35 A
• Power Dissipation: 255 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 17.5A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 75mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8460-5

STW43NM60N
5
Revision history
Table 9.
16-Nov-2007
23-Sep-2008
14-Jan-2009
Date
Document revision history
Revision
1
2
3
First release
Document status promoted from preliminary data to datasheet.
V
ratings
GS
value has been modified in
Changes
Table 2: Absolute maximum
Revision history
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