STW43NM60N STMicroelectronics, STW43NM60N Datasheet - Page 6

• Manufacturer Part Number: STW43NM60N
• Description: MOSFET N-CH 600V 35A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW43NM60N

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 88 mOhm @ 17.5A, 10V
• Drain To Source Voltage (vdss): 600V
• Current - Continuous Drain (id) @ 25° C: 35A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 130nC @ 10V
• Input Capacitance (ciss) @ Vds: 4200pF @ 50V
• Power - Max: 255W
• Mounting Type: Through Hole
• Package / Case: TO-247-3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.088 Ohm @ 10 V
• Drain-source Breakdown Voltage: 600 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 35 A
• Power Dissipation: 255 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 17.5A
• Drain Source Voltage Vds: 600V
• On Resistance Rds(on): 75mohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 3V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8460-5

Electrical characteristics
2.1
6/12
Figure 2.
Figure 4.
Figure 6.
100
0.1
(A)
10
I
D
15.5
1
20.5
10.5
G
100
(S)
0.1
(A)
5.5
0.5
80
40
20
60
I
FS
D
Operation in this area is
0
Limited by max R
0
0
Electrical characteristics (curves)
Safe operating area
Output characteristics
Transconductance
V
5
GS
1
=10V
10
DS(on)
10
10
15
20
T
T
T
J
J
J
20
=150°C
=-50°C
=25°C
100
7V
30
25
V
6V
5V
DS
V
I
(V)
DS
D
(A)
100µs
10µs
10ms
AM00887v1
1ms
(V)
AM00888v1
AM00890v1
Figure 3.
Figure 5.
Figure 7.
R
0.080
0.078
0.076
0.066
0.074
0.072
0.070
0.068
DS(on)
100
(A)
(Ω)
80
40
20
60
I
D
0
0
0
Thermal impedance
Transfer characteristics
Static drain-source on resistance
2
V
I
D
GS
=17.5A
10
=10V
4
20
6
8
30
STW43NM60N
10
V
I
GS
D
(A)
(V)
AM00889v1
AM00891v1