STW42N65M5 STMicroelectronics, STW42N65M5 Datasheet - Page 6

• Manufacturer Part Number: STW42N65M5
• Description: MOSFET N-CH 650V 33A TO-247
• Manufacturer: STMicroelectronics
• Series: MDmesh™r

Specifications of STW42N65M5

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 79 mOhm @ 16.5A, 10V
• Drain To Source Voltage (vdss): 650V
• Current - Continuous Drain (id) @ 25° C: 33A
• Vgs(th) (max) @ Id: 5V @ 250µA
• Gate Charge (qg) @ Vgs: 100nC @ 10V
• Input Capacitance (ciss) @ Vds: 4650pF @ 100V
• Power - Max: 190W
• Mounting Type: Through Hole
• Package / Case: TO-247
• Transistor Polarity: N Channel
• Continuous Drain Current Id: 33A
• Drain Source Voltage Vds: 650V
• On Resistance Rds(on): 0.07ohm
• Rds(on) Test Voltage Vgs: 10V
• Threshold Voltage Vgs Typ: 4V
• Configuration: Single
• Resistance Drain-source Rds (on): 0.07 Ohms
• Drain-source Breakdown Voltage: 650 V
• Gate-source Breakdown Voltage: +/- 25 V
• Continuous Drain Current: 33 A
• Power Dissipation: 190 W
• Maximum Operating Temperature: + 150 C
• Mounting Style: Through Hole
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-8796-5

Electrical characteristics
2.1
6/18
Figure 2.
Figure 4.
Figure 6.
0.01
100
100
100
0.1
0.1
0.1
(A)
(A)
(A)
10
10
10
I
I
I
D
D
D
1
1
1
0.1
0.1
0.1
Electrical characteristics (curves)
Safe operating area for TO-220,
D²PAK, I²PAK
Safe operating area for TO-247
Safe operating area for TO-220FP
1
1
1
10
10
10
100
100
100
V
V
V
DS
DS
DS
(V)
(V)
(V)
Doc ID 15317 Rev 3
100µs
AM01565v1
AM03246v1
AM01566v1
10µs
10ms
1ms
100µs
100µs
10ms
10µs
10ms
10µs
1ms
1ms
Figure 3.
Figure 5.
Figure 7.
Thermal impedance for TO-220,
D²PAK, I²PAK
Thermal impedance for TO-247
Thermal impedance for TO-220FP
STx42N65M5