IXFR80N50P IXYS, IXFR80N50P Datasheet
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Manufacturer Part Number
IXFR80N50P
Description
MOSFET N-CH 500V 45A ISOPLUS247
Specifications of IXFR80N50P
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
72 mOhm @ 40A, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
45A
Vgs(th) (max) @ Id
5V @ 8mA
Gate Charge (qg) @ Vgs
197nC @ 10V
Input Capacitance (ciss) @ Vds
12700pF @ 25V
Power - Max
360W
Mounting Type
Through Hole
Package / Case
ISOPLUS247™
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.072 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
70 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 30 V
Continuous Drain Current
45 A
Power Dissipation
360000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
45
Rds(on), Max, Tj=25°c, (?)
0.072
Ciss, Typ, (pf)
12700
Qg, Typ, (nc)
197
Trr, Typ, (ns)
-
Trr, Max, (ns)
200
Pd, (w)
360
Rthjc, Max, (ºc/w)
0.35
Package Style
ISOPLUS247
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
PolarHV
Power MOSFET
ISOPLUS247
(Electrically Isolated Back Surface)
N-Channel Enhancement Mode
Avalanche Rated
Fast Intrinsic Diode
Symbol
V
V
V
V
I
I
I
E
E
dv/dt
P
T
T
T
T
F
V
Weight
Symbol
(T
BV
V
I
I
R
D25
DM
AR
GSS
DSS
© 2006 IXYS All rights reserved
J
JM
stg
L
DSS
DGR
GSM
GSM
AR
AS
D
C
ISOL
GS(th)
DS(on)
J
DSS
= 25° C unless otherwise specified)
Test Conditions
T
T
Transient
Continuous
T
T
T
T
T
I
T
T
Maximum lead temperature for soldering
Mounting force
50/60 Hz, RMS, 1 minute
Test Conditions
V
V
V
V
V
S
V
J
J
C
C
C
C
C
J
C
GS
DS
GS
DS
GS
GS
= 25° C to 150° C
= 25° C to 150° C; R
= 25° C
= 25° C, pulse width limited by T
= 25° C
= 25° C
= 25° C
≤ I
≤ 150° C, R
= 25° C
TM
= 0 V, I
= V
= ± 30 V
= V
= 0 V
= 10 V, I
DM
, di/dt ≤ 100 A/µs, V
GS
DSS
HiPerFET
, I
D
D
DC
D
= 8 mA
= 500 µA
TM
G
= 40 A
, V
= 2 Ω
DS
= 0
GS
= 1 MΩ
DD
T
J
≤ V
= 125° C
DSS
JM
IXFR 80N50P
,
500
Min.
20..120/4.5..25
3.0
Characteristic Values
-55 ... +150
-55 ... +150
Maximum Ratings
Typ.
2500
± 40
± 30
500
500
200
360
150
300
3.5
45
80
80
20
± 200
5
Max.
5.0
25
72
2
V/ns
N/lb
mA
mJ
mΩ
V~
nA
µA
°C
°C
°C
°C
W
V
V
V
V
A
A
A
V
V
g
J
ISOPLUS247 (IXFR)
Features
l
l
l
l
l
l
Applications
l
l
l
l
l
Advantages
l
l
l
Silicon chip on Direct-Copper-Bond
substrate
- High power dissipation
- Isolated mounting surface
- 2500V electrical isolation
Low drain to tab capacitance(<30pF)
Low R
Rugged polysilicon gate cell structure
Rated for Unclamped Inductive Load
Switching (UIS)
Fast intrinsic Rectifier
AC motor control
DC-DC converters
Battery chargers
Switched-mode and resonant-mode
power supplies
DC choppers
Easy assembly
Space savings
High power density
V
I
R
t
G
D25
G = Gate
S = Source
rr
DS(on)
DSS
D
E153432
DS (on)
S
HDMOS
=
≤ ≤ ≤ ≤ ≤
≤ ≤ ≤ ≤ ≤ 200
= 500
(Isolated Tab)
D = Drain
72 mΩ Ω Ω Ω Ω
TM
45
process
DS99438E(03/06)
ns
A
V
Related parts for IXFR80N50P
IXFR80N50P Summary of contents
... GS(th ± GSS DSS DS DSS DS(on © 2006 IXYS All rights reserved IXFR 80N50P Maximum Ratings 500 = 1 MΩ 500 GS ± 40 ± 200 3.5 ≤ DSS 360 -55 ... +150 150 -55 ... +150 300 20..120/4.5..25 2500 5 Characteristic Values Min. Typ. 500 3.0 ± 200 T = 125° ...
... Notes: 1. Pulse test, t ≤ 300 µs, duty cycle d ≤ IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by 4,835,592 one or moreof the following U.S. patents: 4,850,072 4,881,106 Characteristic Values (T = 25° C unless otherwise specified) J Min ...
... D S Fig Nor m alize d to DS(on alue 3 10V GS 2.8 2.6 2.4 2.2 2 1.8 1.6 1.4 1 100 mperes D © 2006 IXYS All rights reserved C 180 10V 160 8V 140 7V 120 100 3.4 3.1 7V 2.8 2.5 6V 2.2 1.9 1.6 1.3 5V 0.7 0.4 ...
... T = 125 0.4 0.6 0 olts S D Fig. 11. Capacitance 100000 f = 1MH z 10000 1000 100 olts D S IXYS reserves the right to change limits, test conditions, and dimensions. 140 120 100 6 ° 1.2 1.4 1.6 1000 C iss 100 ...
... IXYS All rights reserved Fig. 13. Maxim um Transient Therm al Resistance 0.01 0.1 Pulse Width - Seconds IXFR 80N50P 1 10 ...
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