IXFR80N50P IXYS, IXFR80N50P Datasheet - Page 4

• Manufacturer Part Number: IXFR80N50P
• Description: MOSFET N-CH 500V 45A ISOPLUS247
• Manufacturer: IXYS
• Series: PolarHV™r

Specifications of IXFR80N50P

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Standard
• Rds On (max) @ Id, Vgs: 72 mOhm @ 40A, 10V
• Drain To Source Voltage (vdss): 500V
• Current - Continuous Drain (id) @ 25° C: 45A
• Vgs(th) (max) @ Id: 5V @ 8mA
• Gate Charge (qg) @ Vgs: 197nC @ 10V
• Input Capacitance (ciss) @ Vds: 12700pF @ 25V
• Power - Max: 360W
• Mounting Type: Through Hole
• Package / Case: ISOPLUS247™
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.072 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 70 s
• Drain-source Breakdown Voltage: 500 V
• Gate-source Breakdown Voltage: +/- 30 V
• Continuous Drain Current: 45 A
• Power Dissipation: 360000 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Vdss, Max, (v): 500
• Id(cont), Tc=25°c, (a): 45
• Rds(on), Max, Tj=25°c, (?): 0.072
• Ciss, Typ, (pf): 12700
• Qg, Typ, (nc): 197
• Trr, Typ, (ns): -
• Trr, Max, (ns): 200
• Pd, (w): 360
• Rthjc, Max, (ºc/w): 0.35
• Package Style: ISOPLUS247™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

IXYS reserves the right to change limits, test conditions, and dimensions.
100000
10000
140
120
100
250
200
150
100
1000
80
60
40
20
50
100
0
0
10
0.4
4
0
T
J
f = 1MH z
4.5
= 125
0.6
5
Fig. 11. Capacitance
Fig. 7. Input Adm ittance
T
Fig. 9. Source Cur r e nt vs .
Sour ce -To-Dr ain V oltage
J
°
= 125
10
C
5
-40
25
0.8
°
°
°
V
V
C
C
C
15
G S
V
S D
5.5
D S
- V olts
T
- V olts
J
20
1
- V olts
= 25
6
°
25
C
1.2
6.5
30
1.4
C iss
C os s
C rs s
7
35
7.5
1.6
40
1000
140
120
100
100
80
60
40
20
10
10
0
9
8
7
6
5
4
3
2
1
0
1
10
0
0
T
J
R
= -40
20
V
I
I
125
D S(on)
D
G
DS
25
20
Fig. 8. Tr ans conductance
= 40A
= 10m A
°
°
°
40
C
= 250V
C
C
Fig. 10. Gate Char ge
Lim it
Fig. 12. For w ar d-Bias
Safe Ope r ating Ar e a
40
60
Q
G
I
D
- NanoCoulombs
80
V
60
- A mperes
D S
D C
100 120 140 160 180 200
100
- V olts
80
IXFR 80N50P
100
T
T
J
C
= 150
= 25
120
100µs
°
25µs
1m s
°
10m s
C
C
1000
140