IXFK48N50 IXYS, IXFK48N50 Datasheet - Page 2
![MOSFET N-CH 500V 48A TO-264AA](/photos/5/41/54185/to-264aa_sml.jpg)
IXFK48N50
Manufacturer Part Number
IXFK48N50
Description
MOSFET N-CH 500V 48A TO-264AA
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFK48N50.pdf
(4 pages)
Specifications of IXFK48N50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
48A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
270nC @ 10V
Input Capacitance (ciss) @ Vds
8400pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
TO-264AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Forward Transconductance Gfs (max / Min)
42 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
48 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
48
Rds(on), Max, Tj=25°c, (?)
0.1
Ciss, Typ, (pf)
8400
Qg, Typ, (nc)
270
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
521
Rthjc, Max, (ºc/w)
0.24
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFK48N50
Manufacturer:
IXYS
Quantity:
4 500
Company:
Part Number:
IXFK48N50
Manufacturer:
IXYS
Quantity:
18 000
Company:
Part Number:
IXFK48N50Q
Manufacturer:
IXYS
Quantity:
4 500
Company:
Part Number:
IXFK48N50Q
Manufacturer:
FSC
Quantity:
5 000
© 2000 IXYS All rights reserved
Symbol
g
C
C
C
t
t
t
t
Q
Q
Q
R
R
R
R
Source-Drain Diode
Symbol
I
I
V
t
Q
I
RM
d(on)
d(off)
f
S
SM
r
rr
fs
SD
oss
thJC
thCK
thJC
thCK
iss
rss
g(on)
gs
gd
RM
Test Conditions
V
TO-264 AA
TO-264 AA
miniBLOC, SOT-227 B
miniBLOC, SOT-227 B
Test Conditions
V
Repetitive; pulse width limited by T
I
Pulse test, t 300 s, duty cycle d 2 %
F
DS
GS
= 100 A, V
I
F
= 0 V
= 10 V; I
V
V
R
V
= I
GS
GS
G
GS
= 1
S
, -di/dt = 100 A/ s, V
= 0 V, V
= 10 V, V
= 10 V, V
GS
D
(External),
= 0.5 • I
= 0 V,
DS
DS
DS
= 25 V, f = 1 MHz
= 0.5 • V
= 0.5 • V
D25
, pulse test
R
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592
4,850,072
DSS
DSS
= 100 V
(T
(T
, I
, I
J
J
JM
= 25 C, unless otherwise specified)
= 25 C, unless otherwise specified)
D
D
= 0.5 • I
= 0.5 • I
4,881,106
4,931,844
D25
D25
min.
min.
22
Characteristic Values
Characteristic Values
5,017,508
5,034,796
8400
TBD
typ.
typ.
0.15
0.05
900
280
100
270
135
20
42
30
60
30
60
0.25
0.24
max.
max.
192
250 ns
5,049,961
5,063,307
1.5
48
K/W
K/W
K/W
K/W
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
S
A
A
V
A
C
5,187,117
5,237,481
TO-264 AA Outline
miniBLOC, SOT-227 B
5,486,715
5,381,025
Dim.
Dim.
A
A1
A2
b
b1
b2
c
D
E
e
J
K
L
L1
P
Q
Q1
R
R1
S
T
M4 screws (4x) supplied
A
B
C
D
E
F
G
H
J
K
L
M
N
O
P
Q
R
S
T
U
IXFN / IXFK 44N50
IXFN / IXFK 48N50
25.91
19.81
20.32
4.82
2.54
2.00
1.12
2.39
2.90
0.53
0.00
0.00
2.29
3.17
6.07
8.38
3.81
1.78
6.04
1.57
Min.
31.50
14.91
30.12
38.00
11.68
12.60
25.15
26.54
24.59
-0.05
5.46 BSC
7.80
4.09
4.09
4.09
8.92
0.76
1.98
4.95
3.94
4.72
Millimeter
Min.
Millimeter
26.16
19.96
20.83
5.13
2.89
2.10
1.42
2.69
3.09
0.83
0.25
0.25
2.59
3.66
6.27
8.69
4.32
2.29
6.30
1.83
Max.
31.88
15.11
30.30
38.23
12.22
12.85
25.42
26.90
25.07
Max.
8.20
4.29
4.29
4.29
9.60
0.84
2.13
5.97
4.42
4.85
0.1 -0.002
1.020
Min.
.190
.100
.079
.044
.094
.114
.021
.000
.000
.090
.125
.239
.330
.150
.070
.238
.062
.780
.800
1.240
0.307
0.161
0.161
0.161
0.587
1.186
1.496
0.460
0.351
0.030
0.496
0.990
0.078
0.195
1.045
0.155
0.186
0.968
Min.
.215 BSC
Inches
Inches
1.030
Max.
1.255
0.323
0.169
0.169
0.169
0.595
1.193
1.505
0.481
0.378
0.033
0.506
1.001
0.084
0.235
1.059
0.174
0.191
0.987
0.004
.202
.114
.083
.056
.106
.122
.033
.786
.010
.010
.820
.102
.144
.247
.342
.170
.090
.248
.072
Max.
C1 - 185