IXFK48N50 IXYS, IXFK48N50 Datasheet - Page 3
![MOSFET N-CH 500V 48A TO-264AA](/photos/5/41/54185/to-264aa_sml.jpg)
IXFK48N50
Manufacturer Part Number
IXFK48N50
Description
MOSFET N-CH 500V 48A TO-264AA
Manufacturer
IXYS
Series
HiPerFET™r
Datasheet
1.IXFK48N50.pdf
(4 pages)
Specifications of IXFK48N50
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
100 mOhm @ 500mA, 10V
Drain To Source Voltage (vdss)
500V
Current - Continuous Drain (id) @ 25° C
48A
Vgs(th) (max) @ Id
4V @ 8mA
Gate Charge (qg) @ Vgs
270nC @ 10V
Input Capacitance (ciss) @ Vds
8400pF @ 25V
Power - Max
500W
Mounting Type
Through Hole
Package / Case
TO-264AA
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.1 Ohms
Forward Transconductance Gfs (max / Min)
42 s
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
48 A
Power Dissipation
500 W
Maximum Operating Temperature
+ 150 C
Mounting Style
Through Hole
Minimum Operating Temperature
- 55 C
Vdss, Max, (v)
500
Id(cont), Tc=25°c, (a)
48
Rds(on), Max, Tj=25°c, (?)
0.1
Ciss, Typ, (pf)
8400
Qg, Typ, (nc)
270
Trr, Typ, (ns)
-
Trr, Max, (ns)
250
Pd, (w)
521
Rthjc, Max, (ºc/w)
0.24
Package Style
TO-264
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
IXFK48N50
Manufacturer:
IXYS
Quantity:
4 500
Company:
Part Number:
IXFK48N50
Manufacturer:
IXYS
Quantity:
18 000
Company:
Part Number:
IXFK48N50Q
Manufacturer:
IXYS
Quantity:
4 500
Company:
Part Number:
IXFK48N50Q
Manufacturer:
FSC
Quantity:
5 000
C1 - 186
100
1.6
1.5
1.4
1.3
1.2
1.1
1.0
0.9
90
80
70
60
50
40
30
20
10
60
50
40
30
20
10
0
0
-50
0
0
Fig. 1 Output Characteristics
Fig. 3 R
Fig. 5 Drain Current vs.
T
T
J
10 20 30 40 50 60 70 80 90 100
J
-25
= 25°C
= 25°C
48N50
44N50
5
Case Temperature
DS(on)
0
10
V
T
25
GS
I
vs. Drain Current
C
D
V
- Degrees C
= 10V
15
- Amperes
DS
V
50
- Volts
GS
= 10V
20
75
V
GS
7V
= 15V
25
100 125 150
6V
30
5V
35
2.50
2.25
2.00
1.75
1.50
1.25
1.00
0.75
0.50
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
90
80
70
60
50
40
30
20
10
0
-50
-50
Fig. 2 Input Admittance
Fig. 4 Temperature Dependence
0
Fig. 6 Temperature Dependence of
1
-25
-25
V
of Drain to Source Resistance
Breakdown and Threshold Voltage
GS(th)
2
0
0
3
T
T
25
25
J
J
V
4
- Degrees C
- Degrees C
GS
IXFN / IXFK 44N50
IXFN / IXFK 48N50
© 2000 IXYS All rights reserved
50
50
- Volts
5
I
D
= 24A
6
75
75
T
J
= 25°C
7
100 125 150
100 125 150
BV
8
DSS
9
10