TPCA8048-H(TE12L,Q Toshiba, TPCA8048-H(TE12L,Q Datasheet - Page 22

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TPCA8048-H(TE12L,Q

Manufacturer Part Number
TPCA8048-H(TE12L,Q
Description
MOSFET N-CH 60V 35A 8-SOP ADV
Manufacturer
Toshiba

Specifications of TPCA8048-H(TE12L,Q

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
35A
Mounting Type
Surface Mount
Package / Case
8-SOP
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Power - Max
-
Gate Charge (qg) @ Vgs
-
Vgs(th) (max) @ Id
-
Rds On (max) @ Id, Vgs
-
Other names
TPCA8048-HTE12LQTR
22
Toshiba has developed the SOP Advance package with the same footprint as the standard SOP-8 package. With an external heatsink
on the bottom, the SOP Advance package offers enhanced thermal characteristics, realizing a high power dissipation and thus
high-current capability.
Toshiba has developed a new process technology to further reduce an internal gate-resistance/gate-capacitance ratio (Cgd/Cgs) for
minimizing the self-turn-on loss while maintaining both the low ON-resistance and low gate charge characteristics.
Note 1: When mounted on a glass-epoxy board (25.4 mm x 25.4 mm x 0.8 mm)
Synchronous Rectification DC-DC Converters Enhanced Efficiency by
Thermally Enhanced Package and New Process Technology
New Process Technology
Thermally Enhanced Packages
TPCA8028-H
TPCA8019-H
TPCA8004-H
Footprint Area
Total height (max)
Rth(ch-a) (t = 10 s) (Note 1)
Current rating
Package resistance (Note 2)
Power MOSFETs
90
88
86
84
82
80
78
76
74
0
Two low-side MOSFETs
TPCA8030-H (1p) + TPCA8028-H (2p)
TPCA8030-H (1p) + TPCA8036-H (2p)
TPCA8023-H (1p) + TPCA8019-H (2p)
(New generation)
(One gen. ago)
High-side MOSFET
(Two gen. ago)
Power MOSFETs
5
5.0
Output Current (A)
10
SOP-8
(˚C / W)
(mm
Low-side MOSFET
(mm)
(mΩ)
(A)
2
)
R
15
DS(ON)
Conventional
device
New
device
Typ.@4.5 V(mΩ)
2.3
3.1
4.8
f = 300 kHz, V
20
SOP-8
65.8
Efficiency Characteristics
1.9
1.6
30
18
Note 2: Without chip resistance
IN
25
= 19.5 V, V
90
88
86
84
82
80
78
76
74
OUT
0
One low-side MOSFET
= 1.1 V
SOP Advance
rg Typ.(Ω)
TPCA8030-H (1p) + TPCA8028-H (1p)
TPCA8030-H (1p) + TPCA8036-H (1p)
TPCA8023-H (1p) + TPCA8019-H (1p)
High-side MOSFET
1.0
1.0
2.4
44.6
1.0
0.5
30
40
5
5.0
5.0
SOP Advance
Output Current (A)
10
Low-side MOSFET
Features of the SOP Advance
Same footprint as the SOP-8
Low profile, t = 0.9 mm
High power dissipation
High current guarantee
Low package resistance
15
Cgd/Cgs Typ.(%)
Conventional
device
New
device
Heatsink
12.7
6.8
6.6
20
Unit: mm
25

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