TK12J60U(F) Toshiba, TK12J60U(F) Datasheet

TK12J60U(F)

Manufacturer Part Number

TK12J60U(F)

Description

MOSFET N-CH 600V 12A TO-3PN

Manufacturer

Toshiba

Datasheets

1.TK12D60UQ.pdf (3 pages)

2.TK12J60UF.pdf (6 pages)

Specifications of TK12J60U(F)

Fet Type

MOSFET N-Channel, Metal Oxide

Fet Feature

Standard

Rds On (max) @ Id, Vgs

400 mOhm @ 6A, 10V

Drain To Source Voltage (vdss)

600V

Current - Continuous Drain (id) @ 25° C

12A

Vgs(th) (max) @ Id

5V @ 1mA

Gate Charge (qg) @ Vgs

14nC @ 10V

Input Capacitance (ciss) @ Vds

720pF @ 10V

Power - Max

144W

Mounting Type

Through Hole

Package / Case

TO-3PN, 2-16C1B

Transistor Polarity

N Channel

Drain Source Voltage Vds

600V

On Resistance Rds(on)

360mohm

Rds(on) Test Voltage Vgs

10V

Transistor Case Style

TO-3PN

No. Of Pins

Current Id Max

12A

Rohs Compliant

Yes

Configuration

Single

Resistance Drain-source Rds (on)

0.4 Ohms

Drain-source Breakdown Voltage

600 V

Gate-source Breakdown Voltage

+/- 30 V

Continuous Drain Current

12 A

Power Dissipation

144 W

Maximum Operating Temperature

+ 150 C

Mounting Style

Through Hole

Minimum Operating Temperature

- 55 C

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

TK12J60U(F)

Current page: 1 of 3
Download datasheet (83Kb)

TOSHIBA DTMOS II FAMILY OF 600V POWER MOSFETS USE SUPERJUNCTION...

http://www.toshiba.com/taec/news/press_releases/2008/power_08_538.jsp

IRVINE, Calif., Sept. 3, 2008 — Toshiba America

Electronic Components, Inc. (TAEC)* today announced

a family of 600V DTMOS II superjunction MOSFETs

that contribute to higher efficiency of switched-mode

power supplies, such as AC adapters in notebook and

desktop computers, servers, flat panel displays, and

ballasts used in lighting, due to lower on-state

resistance (R

characteristics. Developed by Toshiba Corp., the

DTMOS II MOSFETs employ a superjunction structure

that enables a reduction in both on-state resistance

tradeoffs. Typically, when either of these

characteristics is reduced, the other increases, but with

its superjunction DTMOS II design, Toshiba has been

able to reduce both simultaneously, enabling higher

power efficiency and switching performance than

conventional MOSFETs.

In these devices, Toshiba refined the superjunction

structure with the company's second generation

DTMOS technology. By applying this design and

optimizing the entire device, Toshiba has achieved

figure of merit values for R

that are approximately 68 percent less than that of

conventional Toshiba MOSFETs. This figure of merit is

one important performance index for MOSFETs in

which smaller is better, and is indicative of higher

switching performance and power efficiency.

The first twelve products in the DTMOS II family include 12A, 15A, and 20A 600V MOSFETs, each offered

in a choice of four packages, including TO-3P(N), TO-220SIS, TO-220(W) and TFP, a compact surface

mount package. The 12A devices feature low on-resistance of 0.4 ohms ( Ω, max.), the 15A devices feature

on-resistance of 0.3 Ω (max.) and 20A devices have on-resistance rated at 0.19 Ω (max.).

"With a combination of low on-resistance, fast switching and ruggedness, our new DTMOS II devices are

ideally suited for the switched-mode power supply and ballast lighting markets and are expected to enable a

significant increase in power efficiency," said Jeff Lo, business development manager, Discrete Power

Devices, for TAEC.

Features

Technical Specifications:

12A, 15A, or 20A 600V MOSFETs in Second DTMOS Generation Utilize "Superjunction" Technology to Reduce

TOSHIBA DTMOS II FAMILY OF 600V POWER MOSFETS USE SUPERJUNCTION STRUCTURE

Part

Number

TK20J60U

TK20A60U

TK20D60U

On-state Resistance x Gate Charge by 68 Percent Compared to Conventional Toshiba MOSFET Technology

DS(ON)

Due to the superjunction structure, R

Based on R

MOSFETs available in the market today.

Available in four packages to provide designers a choice best suited to their needs: TO-3P(N), TO-220(W), TO-220SIS, or

TFP, a compact Toshiba package.

) and gate charge (Q

DS(ON)

Voltage

+ 30V

Source

(max.)

Gate-

DS(ON)

DSS

) and faster switching

* Q g, the Toshiba DTMOS II MOSFETs feature competitive performance among superjunction

Current

20A

(max.)

Drain

DS(ON)

Family/Line/Product Name

), which usually are

* Q g (see note 1)

resistance

0.19 Ω

(max.)

source

Drain-

DS(ON)

TO INCREASE POWER EFFICIENCY

DS(ON)

Charge,

27nC

(typ.)

can be as low as 0.19 W (max.) for the 20A devices, at V

Gate

Avalanche Energy

(mJ)

Single

Pulse

144

Download Larger Image (JPG 147KB)

Repetitive

Package

Package/Dimensions

15.9 x 23.3 x 4.8

10 x 17.8 x 4.5

TO-220SIS

TO-220(W)

TO-3P(N)

Toshiba

(mm)

Industry

Standard

Equivalent

TO-247AD Sept. ‘08

(Isolated)

(Non-

isolated)

TO-220F

TO-220

= 600V.

Planned

Mass

Production

Sept. ‘08

Page 1 of 3

12/30/2008

Related parts for TK12J60U(F)

TK12J60U(F) Summary of contents

Page 1

... TOSHIBA DTMOS II FAMILY OF 600V POWER MOSFETS USE SUPERJUNCTION STRUCTURE TO INCREASE POWER EFFICIENCY 12A, 15A, or 20A 600V MOSFETs in Second DTMOS Generation Utilize "Superjunction" Technology to Reduce On-state Resistance x Gate Charge by 68 Percent Compared to Conventional Toshiba MOSFET Technology IRVINE, Calif., Sept. 3, 2008 — Toshiba America Electronic Components, Inc. (TAEC)* today announced ...

Page 2

... October 2008. Toshiba’s Discrete Products Since 1986, Toshiba Corp. has ranked as the top discrete supplier on a worldwide basis, based on annual revenue from international shipments of total discrete products. According to the most recent annual report from market research firm Gartner Dataquest (San Jose, CA), Toshiba remained the top discrete semiconductor supplier. (Source: " ...

Page 3

... Technical and application information contained here is subject to the most recent applicable Toshiba product specifications. In developing designs, please ensure that Toshiba products are used within specified operating ranges as set forth in the most recent Toshiba product specifications and the information set forth in Toshiba’s "Handling Guide for Semiconductor Devices," ...

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