BSS123LT1G ON Semiconductor, BSS123LT1G Datasheet

MOSFET N-CH 100V 170MA SOT-23

BSS123LT1G

Manufacturer Part Number
BSS123LT1G
Description
MOSFET N-CH 100V 170MA SOT-23
Manufacturer
ON Semiconductor
Type
Power MOSFETr
Datasheets

Specifications of BSS123LT1G

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6 Ohm @ 100mA, 10V
Drain To Source Voltage (vdss)
100V
Current - Continuous Drain (id) @ 25° C
170mA
Vgs(th) (max) @ Id
2.8V @ 1mA
Input Capacitance (ciss) @ Vds
20pF @ 25V
Power - Max
225mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6 Ohm @ 10 V
Forward Transconductance Gfs (max / Min)
0.08 S
Drain-source Breakdown Voltage
100 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.17 A
Power Dissipation
225 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Current, Drain
0.17 A
Package Type
SOT-23 (TO-236)
Polarization
N-Channel
Resistance, Drain To Source On
5 Ohms
Temperature, Operating, Maximum
+150 °C
Temperature, Operating, Minimum
-55 °C
Time, Turn-off Delay
40 ns
Time, Turn-on Delay
20 ns
Transconductance, Forward
80 Millimhos
Voltage, Breakdown, Drain To Source
100 V
Voltage, Forward, Diode
1.3 V
Voltage, Gate To Source
±20 VDC
Number Of Elements
1
Polarity
N
Channel Mode
Enhancement
Drain-source On-res
6Ohm
Drain-source On-volt
100V
Gate-source Voltage (max)
±20V
Drain Current (max)
170mA
Output Power (max)
Not RequiredW
Frequency (max)
Not RequiredMHz
Noise Figure
Not RequireddB
Power Gain
Not RequireddB
Drain Efficiency
Not Required%
Operating Temp Range
-55C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Gate Charge (qg) @ Vgs
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
BSS123LT1GOSTR

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Company
Part Number
Manufacturer
Quantity
Price
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BSS123LT1G
Manufacturer:
ON
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ON Semiconductor
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BSS123LT1
Power MOSFET
170 mAmps, 100 Volts
N−Channel SOT−23
Features
1. The Power Dissipation of the package may result in a lower continuous drain
2. Pulse Width v 300 ms, Duty Cycle v 2.0%.
3. FR−5 = 1.0  0.75  0.062 in.
March, 2005 − Rev. 5
MAXIMUM RATINGS
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.
THERMAL CHARACTERISTICS
Drain−Source Voltage
Gate−Source Voltage
Drain Current
Total Device Dissipation FR−5 Board
Thermal Resistance,
Junction and Storage Temperature
Pb−Free Packages are Available
Semiconductor Components Industries, LLC, 2005
current.
− Continuous
− Non−repetitive (t
− Continuous (Note 1)
− Pulsed (Note 2)
(Note 3) T
Derate above 25 C
Junction−to−Ambient
A
Characteristic
= 25 C
Rating
p
50 ms)
Preferred Device
Symbol
Symbol
T
V
V
R
J
V
I
P
GSM
, T
DSS
DM
I
qJA
GS
D
D
stg
−55 to +150
Value
0.17
0.68
Max
100
225
556
1.8
20
40
1
mW/ C
Unit
Unit
Vdc
Vdc
Vpk
Adc
mW
C/W
C
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
Preferred devices are recommended choices for future use
and best overall value.
1
2
ORDERING INFORMATION
SA
M
1
3
http://onsemi.com
PIN ASSIGNMENT
R
170 mAMPS
100 VOLTS
DS(on)
Gate
1
CASE 318
STYLE 21
= Device Code
= Date Code
SOT−23
N−Channel
Drain
Publication Order Number:
3
3
2
= 6 W
Source
2
MARKING
DIAGRAM
BSS123LT1/D
SA

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BSS123LT1G Summary of contents

Page 1

BSS123LT1 Preferred Device Power MOSFET 170 mAmps, 100 Volts N−Channel SOT−23 Features Pb−Free Packages are Available MAXIMUM RATINGS Rating Drain−Source Voltage Gate−Source Voltage − Continuous 50 ms) − Non−repetitive (t p Drain Current − Continuous (Note 1) − Pulsed (Note ...

Page 2

... Vdc Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%. ORDERING INFORMATION Device BSS123LT1 BSS123LT1G BSS123LT3 BSS123LT3G †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. BSS123LT1 ( unless otherwise noted) ...

Page 3

TYPICAL ELECTRICAL CHARACTERISTICS 2.0 1 1.6 1.4 1.2 1.0 0.8 0.6 0.4 0 1.0 2.0 3.0 4.0 5.0 6 DRAN SOURCE VOLTAGE (VOLTS) DS Figure 1. Ohmic Region 2.4 2.2 V ...

Page 4

... *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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