BSS123LT1G ON Semiconductor, BSS123LT1G Datasheet - Page 2

• Manufacturer Part Number: BSS123LT1G
• Description: MOSFET N-CH 100V 170MA SOT-23
• Manufacturer: ON Semiconductor
• Type: Power MOSFETr

Specifications of BSS123LT1G

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 6 Ohm @ 100mA, 10V
• Drain To Source Voltage (vdss): 100V
• Current - Continuous Drain (id) @ 25° C: 170mA
• Vgs(th) (max) @ Id: 2.8V @ 1mA
• Input Capacitance (ciss) @ Vds: 20pF @ 25V
• Power - Max: 225mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6 Ohm @ 10 V
• Forward Transconductance Gfs (max / Min): 0.08 S
• Drain-source Breakdown Voltage: 100 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.17 A
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Current, Drain: 0.17 A
• Package Type: SOT-23 (TO-236)
• Polarization: N-Channel
• Resistance, Drain To Source On: 5 Ohms
• Temperature, Operating, Maximum: +150 °C
• Temperature, Operating, Minimum: -55 °C
• Time, Turn-off Delay: 40 ns
• Time, Turn-on Delay: 20 ns
• Transconductance, Forward: 80 Millimhos
• Voltage, Breakdown, Drain To Source: 100 V
• Voltage, Forward, Diode: 1.3 V
• Voltage, Gate To Source: ±20 VDC
• Number Of Elements: 1
• Polarity: N
• Channel Mode: Enhancement
• Drain-source On-res: 6Ohm
• Drain-source On-volt: 100V
• Gate-source Voltage (max): ±20V
• Drain Current (max): 170mA
• Output Power (max): Not RequiredW
• Frequency (max): Not RequiredMHz
• Noise Figure: Not RequireddB
• Power Gain: Not RequireddB
• Drain Efficiency: Not Required%
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Gate Charge (qg) @ Vgs: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BSS123LT1GOSTR

4. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2.0%.
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING CHARACTERISTICS
REVERSE DIODE
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Drain−Source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate−Body Leakage Current
Gate Threshold Voltage
Static Drain−Source On−Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn−On Delay Time
Turn−Off Delay Time
Diode Forward On−Voltage
BSS123LT1
BSS123LT1G
BSS123LT3
BSS123LT3G
(V
(V
(V
(V
(V
(V
(V
(V
(V
(I
D
GS
GS
GS
DS
GS
DS
DS
DS
DS
= 0.34 Adc, V
= 0, I
= 0, V
= 20 Vdc, V
= V
= 10 Vdc, I
= 25 Vdc, I
= 25 Vdc, V
= 25 Vdc, V
= 25 Vdc, V
GS
D
DS
, I
= 250 mAdc)
D
= 100 Vdc)
= 1.0 mAdc)
D
D
GS
DS
GS
GS
GS
= 100 mAdc)
= 100 mAdc)
= 0 Vdc)
= 0)
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
Device
(Note 4)
T
T
J
J
= 25 C
= 125 C
Characteristic
(4)
(T
A
= 25 C unless otherwise noted)
(V
(V
V
GS
CC
CC
= 10 Vdc, R
= 30 Vdc, I
30 Vdc, I
http://onsemi.com
BSS123LT1
C
C
GS
= 0.28 Adc,
= 50 W)
0.28 Adc,
2
(Pb−Free)
(Pb−Free)
Package
SOT−23
SOT−23
SOT−23
SOT−23
V
Symbol
V
r
(BR)DSS
DS(on)
t
t
I
C
I
GS(th)
C
C
V
d(on)
d(off)
DSS
GSS
g
oss
rss
SD
iss
fs
10,000 Tape & Reel
10,000 Tape & Reel
Min
100
3,000 Tape & Reel
3,000 Tape & Reel
0.8
80
−
−
−
−
−
−
−
−
−
−
Shipping
Typ
5.0
9.0
4.0
20
20
40
−
−
−
−
−
−
−
†
Max
2.8
6.0
1.3
15
60
50
−
−
−
−
−
−
−
mmhos
mAdc
nAdc
Unit
Vdc
Vdc
pF
pF
pF
ns
ns
W
V