BSS223PW L6327 Infineon Technologies, BSS223PW L6327 Datasheet - Page 5

• Manufacturer Part Number: BSS223PW L6327
• Description: MOSFET P-CH 20V 390MA SOT-323
• Manufacturer: Infineon Technologies
• Series: OptiMOS™r

Specifications of BSS223PW L6327

• Package / Case: SOT-323
• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 1.2 Ohm @ 390mA, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 390mA
• Vgs(th) (max) @ Id: 1.2V @ 1.5µA
• Gate Charge (qg) @ Vgs: 0.62nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 56pF @ 15V
• Power - Max: 250mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 55 C
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 1.2 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 0.39 A
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: BSS223PW; BSS223PWINTR; BSS223PWL6327; BSS223PWL6327XT; BSS223PWXT; BSS223PWXTINTR; BSS223PWXTINTR; SP000245423

5 Typ. output characteristic
I
parameter: T j =25°C
7 Typ. transfer characteristics
I
parameter: T
D
D
= f ( V
= f (V
0.7
0.5
0.4
0.3
0.2
0.1
0.7
0.5
0.4
0.3
0.2
0.1
A
A
0
0
0
0
DS
GS
3V
4V
4.5V
6V
7V
8V
10V
)
); |V
0.5
j
0.3
= 25 °C
DS
| 2 x |I
1
0.6
1.5
D
| x R
0.9
2
DS(on)max
V
V
2.5V
2.2V
-V
-V
Preliminary data
DS
GS
1.5
3
Page 5
6 Typ. drain-source on resistance
R
parameter: V
8 Typ. forward transconductance
g
parameter: T j = 25 °C
fs
DS(on)
= f(I
2.5
1.5
0.5
1.1
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
S
4
3
2
1
0
0
0
0
D
= f (I
2.2V
2.5V
3V
4V
4.5V
6V
7V
8V
10V
)
0.1
0.1
D
GS
)
0.2
0.2
0.3
0.3
0.4
0.4
BSS 223PW
0.5
0.5
2002-07-04
A
A
-I
-I
D
D
0.7
0.7