NTHD3101FT1G ON Semiconductor, NTHD3101FT1G Datasheet - Page 4

• Manufacturer Part Number: NTHD3101FT1G
• Description: MOSFET P-CH 20V 3.2A CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD3101FT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 80 mOhm @ 3.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 7.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 680pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHD3101FT1GOSTR

GATE−TO−SOURCE OR DRAIN−TO−SOURCE VOLTAGE (VOLTS)
1500
1200
1000
900
600
300
100
10
0
1
5
1
V
Figure 9. Resistive Switching Time Variation
C
C
V
I
V
DS
D
ISS
RSS
DS
GS
= −3.2 A
−V
= 0 V
= −10 V
= −4.5 V
GS
Figure 7. Capacitance Variation
R
0
G
V
−V
, GATE RESISTANCE (OHMS)
GS
vs. Gate Resistance
DS
= 0 V
5
TYPICAL P−CHANNEL PERFORMANCE CURVES
10
10
(T
J
15
T
C
= 25°C unless otherwise noted)
J
OSS
= 25°C
http://onsemi.com
t
t
t
t
d(on)
d(off)
r
f
20
100
4
5
4
3
2
1
0
0
−V
5
4
3
2
1
0
0.3
Q
DS
Drain−to−Source Voltage vs. Total Charge
GS
Figure 10. Diode Forward Voltage vs. Current
−V
V
T
J
GS
SD
Figure 8. Gate−to−Source and
= 25°C
2
, SOURCE−TO−DRAIN VOLTAGE (VOLTS)
= 0 V
Q
Q
GD
g
, TOTAL GATE CHARGE (nC)
0.6
Q
T
4
0.9
6
I
T
D
J
= −3.2 A
−V
= 25°C
GS
8
10
8
6
4
2
0
1.2