NTHD3101FT1G ON Semiconductor, NTHD3101FT1G Datasheet - Page 5

• Manufacturer Part Number: NTHD3101FT1G
• Description: MOSFET P-CH 20V 3.2A CHIPFET
• Manufacturer: ON Semiconductor

Specifications of NTHD3101FT1G

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Diode (Isolated)
• Rds On (max) @ Id, Vgs: 80 mOhm @ 3.2A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3.2A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 7.4nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 680pF @ 10V
• Power - Max: 1.1W
• Mounting Type: Surface Mount
• Package / Case: 8-ChipFET™
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NTHD3101FT1GOSTR

100E−6
100E−9
10E−6
10E−9
0.1
10
1E−3
1E−6
3.5
2.5
1.5
0.5
1
0.20
3
2
1
0
25
V
F
0
, INSTANTANEOUS FORWARD VOLTAGE (VOLTS)
T
J
= 150°C
Figure 13. Typical Reverse Current
Figure 11. Typical Forward Voltage
45
TYPICAL SCHOTTKY PERFORMANCE CURVES
0.40
V
Figure 15. Current Derating
T
R
square wave
L
65
, REVERSE VOLTAGE (VOLTS)
T
T
T
Ipk/Io = p
Ipk/Io = 5
Ipk/Io = 10
Ipk/Io = 20
, LEAD TEMPERATURE (°C)
J
J
J
= 150°C
= 100°C
= 25°C
dc
85
T
J
10
0.60
= −55°C
T
105
J
= 25°C
125
freq = 20 kHz
0.80
145
http://onsemi.com
165
20
5
100E−3
100E−6
10E+0
10E−3
1E+0
1E−3
0.1
10
1.8
1.6
1.4
1.2
0.8
0.6
0.4
0.2
1
0.20
1
0
0
0
Ipk/Io = 20
T
V
(T
Figure 14. Maximum Reverse Current
J
F
I
, MAXIMUM INSTANTANEOUS FORWARD
0.5
J
= 150°C
Figure 12. Maximum Forward Voltage
Ipk/Io = 10
O
Figure 16. Forward Power Dissipation
= 25°C unless otherwise noted)
, AVERAGE FORWARD CURRENT (AMPS)
V
R
0.40
Ipk/Io = 5
, REVERSE VOLTAGE (VOLTS)
T
T
T
1
J
J
J
= 150°C
= 100°C
= 25°C
VOLTAGE (VOLTS)
Ipk/Io = p
1.5
10
T
0.60
square wave
J
= 25°C
2
2.5
0.80
dc
3
3.5
20