AOD444 Alpha & Omega Semiconductor Inc, AOD444 Datasheet - Page 3

• Manufacturer Part Number: AOD444
• Description: MOSFET N-CH 60V 12A TO-252
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AOD444

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 60 mOhm @ 12A, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 12A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 540pF @ 30V
• Power - Max: 20W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1108-2

Rev 0: Aug 2009
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
100
130
110
30
25
20
15
10
90
80
70
60
50
40
30
90
70
50
30
5
0
0
0
2
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 3: On-Resistance vs. Drain Current and
Fig 1: On-Region Characteristics (Note E)
10V
1
5
4
V
Gate Voltage (Note E)
GS
=4.5V
V
2
V
(Note E)
GS
7V
I
DS
D
10
(Volts)
(A)
125°C
(Volts)
6
3
V
GS
25°C
=10V
15
8
5V
V
GS
I
D
=12A
=3.5V
4
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4.5V
4V
6V
20
10
5
20
16
12
2.4
2.2
1.8
1.6
1.4
1.2
0.8
1.0E+01
1.0E+00
1.0E-01
1.0E-02
1.0E-03
1.0E-04
1.0E-05
8
4
0
2
1
2
0
Figure 4: On-Resistance vs. Junction Temperature
40
Figure 2: Transfer Characteristics (Note E)
0.0
V
25
Figure 6: Body-Diode Characteristics (Note E)
DS
=5V
V
I
D
50
3
0.2
GS
=12A
25°C
125°C
=10V
Temperature (°C)
75
0.4
V
(Note E)
GS
(Volts)
100
V
4
SD
125°C
0.6
(Volts)
125
25°C
AOD444/AOI444
V
I
D
GS
=6A
0.8
=4.5V
150
5
17
10
18
5
2
175
0
1.0
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200
6
1.2