AO4435 Alpha & Omega Semiconductor Inc, AO4435 Datasheet - Page 3

• Manufacturer Part Number: AO4435
• Description: MOSFET P-CH -30V -10.5A 8-SOIC
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO4435

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 14 mOhm @ 11A, 20V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 10.5A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 24nC @ 10V
• Input Capacitance (ciss) @ Vds: 1400pF @ 15V
• Power - Max: 3.1W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1030-2

AO4435
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
40
35
30
25
20
15
10
80
60
40
20
5
55
45
35
25
15
0
5
0
0
2
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 3: On-Resistance vs. Drain Current and
4
25°C
-10V
Figure 1: On-Region Characteristics
1
6
5
8
Gate Voltage
V
2
-8V
-V
V
V
GS
-V
GS
GS
DS
-I
10
=-20V
GS
D
=-5V
=-10V
10
(Volts)
(A)
(Volts)
12
-6V
3
125°C
14
-4.5V
15
V
GS
16
= -4V
4
I
D
=-11A
18
20
20
5
1E+01
1E+00
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
80
60
40
20
1.6
1.4
1.2
1.0
0.8
0.6
0
0
0
0.0
Figure 4: On-Resistance vs. Junction Temperature
V
DS
= -5V
25
1
Figure 2: Transfer Characteristics
Figure 6: Body-Diode Characteristics
125°C
0.2
V
I
50
D
GS
=-10A
2
=-10V
Temperature (°C)
-V
0.4
-V
75
GS
125°C
SD
(Volts)
3
(Volts)
100
0.6
V
I
D
4
GS
=-5A
=-5V
125
25°C
0.8
25°C
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5
150
V
I
D
GS
=-11A
=-20V
1.0
175
6