AO4419 Alpha & Omega Semiconductor Inc, AO4419 Datasheet
AO4419
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AO4419 Summary of contents
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... AO4419 P-Channel Enhancement Mode Field Effect Transistor General Description The AO4419 uses advanced trench technology to provide excellent R , and low gate charge. This DS(ON) device is suitable for use as a load switch or in PWM applications.Standard Product AO4419 is Pb-free (meets ROHS & Sony 259 specifications). ...
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... AO4419 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO4419 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V - (Volts) DS Fig 1: On-Region Characteristics =-4. (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage 25° (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd -3. =- 1.60 1.40 1.20 1.00 V =-10V GS 0. 1.0E+01 1.0E+00 I =-9.7A D 1.0E-01 1 ...
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... AO4419 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =-15V DS I =-9. (nC) g Figure 7: Gate-Charge Characteristics 100 In descending order T =25°C, 100°C, 125°C, 150° 0.001 0.01 0.1 Time in Avalache, t Figure 9: Single Pulse Avalanche Capability 0.001 0.01 Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note E) Alpha & ...
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... AO4419 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 D =-15V =-9.7A θJA θJA J, =40°C/W θJA 1 0.1 0.01 Single Pulse 0.00001 0.0001 Alpha & Omega Semiconductor, Ltd. In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.001 0.01 0.1 Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance ...