BSP250,135 NXP Semiconductors, BSP250,135 Datasheet - Page 7
![MOSFET P-CH 30V 3A SOT223](/photos/1/39/13965/568-sot-223_sc-73_sot223-1_sml.jpg)
BSP250,135
Manufacturer Part Number
BSP250,135
Description
MOSFET P-CH 30V 3A SOT223
Manufacturer
NXP Semiconductors
Datasheet
1.BSP250135.pdf
(12 pages)
Specifications of BSP250,135
Package / Case
SOT-223 (3 leads + Tab), SC-73, TO-261
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
250 mOhm @ 1A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
3A
Vgs(th) (max) @ Id
2.8V @ 1mA
Gate Charge (qg) @ Vgs
25nC @ 10V
Input Capacitance (ciss) @ Vds
250pF @ 20V
Power - Max
1.65W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single Dual Drain
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
0.25 Ohm @ 10 V
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
3 A
Power Dissipation
1650 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934033450135
BSP250 /T3
BSP250 /T3
BSP250 /T3
BSP250 /T3
Philips Semiconductors
1997 Jun 20
handbook, full pagewidth
P-channel enhancement mode
vertical D-MOS transistor
R th j-s
(K/W)
Fig.12 Transient thermal resistance from junction to soldering point as a function of pulse time; typical values.
10
10
1
10
1
6
0.75
0.33
0.05
0.02
0.01
0.5
0.2
0.1
=
10
0
5
10
4
10
7
3
10
2
10
P
1
t p
Product specification
T
t p (s)
=
MBE147
BSP250
t p
T
t
1