AO3423 Alpha & Omega Semiconductor Inc, AO3423 Datasheet - Page 3

• Manufacturer Part Number: AO3423
• Description: MOSFET P-CH -20V -2A SOT23
• Manufacturer: Alpha & Omega Semiconductor Inc

Specifications of AO3423

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 92 mOhm @ 2A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 2A
• Vgs(th) (max) @ Id: 1.4V @ 250µA
• Gate Charge (qg) @ Vgs: 6.6nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 620pF @ 10V
• Power - Max: 1.4W
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 785-1016-2

AO3423
Alpha & Omega Semiconductor, Ltd.
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
180
160
140
120
100
15
12
80
60
40
200
180
160
140
120
100
9
6
3
0
80
60
40
0
-10.0V
-8.0V
-6.0V
0
0
Figure 5: On-Resistance vs. Gate-Source Voltage
Figure 3: On-Resistance vs. Drain Current and
V
GS
=-2.5V
Fig 1: On-Region Characteristics
1
2
2
-4.0V
V
25°C
GS
Gate Voltage
2
-V
4
=-4.5V
-V
4
-3.5V
DS
-I
GS
D
(Volts)
(Volts)
(A)
-2.0V
3
6
6
V
GS
I
D
-2.5V
=-10V
=-2A
-3.0V
V
GS
=-1.5V
4
8
125°C
8
10
10
5
1E+01
1E+00
10
1.6
1.4
1.2
1.0
0.8
1E-01
1E-02
1E-03
1E-04
1E-05
1E-06
8
6
4
2
0
0
0
0.0
V
DS
0.5
=-5V
25
Figure 4: On-Resistance vs. Junction
Figure 2: Transfer Characteristics
I
Figure 6: Body-Diode Characteristics
D
=-2A, V
0.2
I
D
=-2A, V
1
50
125°C
GS
Temperature (°C)
0.4
=-10V
Temperature
GS
-V
1.5
125°C
75
=-4.5V
-V
GS
SD
(Volts)
0.6
(Volts)
I
100
D
2
25°C
=-1A, V
25°C
0.8
125
2.5
GS
=-2.5V
1.0
150
3
175
3.5
1.2