AO3413 Alpha & Omega Semiconductor Inc, AO3413 Datasheet
AO3413
Specifications of AO3413
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AO3413 Summary of contents
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... General Description General Description The AO3413 uses advanced trench technology to The AO3413 uses advanced trench technology to provide excellent R provide excellent R , low gate charge and , low gate charge and DS(ON) DS(ON) operation with gate voltages as low as 1.8V. This operation with gate voltages as low as 1.8V. This ...
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... R =-10V, R =3 GEN I =-3A, dI/dt=100A =-3A, dI/dt=100A FR-4 board with 2oz. copper still air environment with T and lead to ambient FR-4 board with 2oz. Copper still air environment with T 12 www.aosmd.com www.aosmd.com AO3413 Min Typ Max Units - ±100 nA -0.4 -0. - 115 70 100 m 85 ...
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... Figure 2: Transfer Characteristics V V =-2.5V =-2. =-2.6A =-2. =-1.8V =-1. =-1A =- 100 100 125 125 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 125°C 25°C 0.0 0.2 0.4 0.6 0.8 -V (Volts) SD Figure 6: Body-Diode Characteristics AO3413 2.5 2 =-4.5V =-4. =-3A =- 150 150 175 175 1.0 1.2 Page Page ...
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... C C rss rss (Volts) (Volts Figure 8: Capacitance Characteristics Figure 8: Capacitance Characteristics T T =150°C =150°C J(Max) J(Max =25°C =25° 0.001 0.001 0.1 0 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction- to-Ambient (Note 100 AO3413 20 20 1000 1000 1000 Page Page ...
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... Vgs Vgs Vdd Vdd VDC VDC + + Vds Vds Diode Recovery Test Circuit & Waveforms Diode Recovery Test Circuit & Waveforms Vgs Vgs -Isd + Vdd VDC - -Vds www.aosmd.com www.aosmd.com AO3413 Qgd Qgd C harge C harge t t off off d(off ff 90% 90% 10% 10 Idt Idt rr ...