NDS0605 Fairchild Semiconductor, NDS0605 Datasheet
NDS0605
Manufacturer Part Number
NDS0605
Description
MOSFET P-CH 60V 180MA SOT-23
Manufacturer
Fairchild Semiconductor
Datasheet
1.NDS0605.pdf
(5 pages)
Specifications of NDS0605
Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
5 Ohm @ 500mA, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
180mA
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
2.5nC @ 10V
Input Capacitance (ciss) @ Vds
79pF @ 25V
Power - Max
360mW
Mounting Type
Surface Mount
Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Configuration
Single
Transistor Polarity
P-Channel
Resistance Drain-source Rds (on)
5 Ohm @ 10 V
Drain-source Breakdown Voltage
60 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
0.18 A
Power Dissipation
360 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
NDS0605TR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
NDS0605
Manufacturer:
FSC
Quantity:
522 000
Part Number:
NDS0605
Manufacturer:
FAIRCHILD/仙童
Quantity:
20 000
Company:
Part Number:
NDS0605-NL
Manufacturer:
NXP
Quantity:
4 300
Part Number:
NDS0605-NL
Manufacturer:
MDC
Quantity:
20 000
NDS0605
P-Channel Enhancement Mode Field Effect Transistor
General Description
These
transistors are produced using Fairchild’s proprietary,
high cell density, DMOS technology. This very high
density process has been designed to minimize on-
state
performance and fast switching. They can be used, with
a minimum of effort, in most applications requiring up to
180mA DC and can deliver current up to 1A.
This product is particularly suited to low voltage
applications requiring a low current high side switch.
2002 Fairchild Semiconductor Corporation
Absolute Maximum Ratings
Symbol
V
V
I
P
T
T
Thermal Characteristics
R
Package Marking and Ordering Information
D
J
L
DSS
GSS
D
θJA
, T
Device Marking
STG
resistance,
P-Channel enhancement mode field effect
65D
SOT-23
Drain-Source Voltage
Gate-Source Voltage
Drain Current
Maximum Power Dissipation
Derate Above 25°C
Operating and Storage Junction Temperature Range
Maximum Lead Temperature for Soldering
Purposes, 1/16” from Case for 10 Seconds
Thermal Resistance, Junction-to-Ambient
provide
D
– Continuous
– Pulsed
rugged
NDS0605
G
Device
Parameter
and
S
reliable
T
A
=25
o
C unless otherwise noted
Reel Size
7’’
(Note 1)
(Note 1)
(Note 1)
Features
• −0.18A, −60V.
• Voltage controlled p-channel small signal switch
• High density cell design for low R
•
High saturation current
Tape width
G
−55 to +150
Ratings
8mm
R
DS(ON)
−0.18
0.36
−60
±20
300
350
2.9
−1
D
= 5 Ω @ V
S
DS(ON)
GS
July 2002
= −10 V
NDS0605 Rev B1(W)
3000 units
Quantity
mW/°C
Units
°C/W
°C
°C
W
V
V
A
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Datasheet:
NDS0605 Summary of contents
Page 1
... C unless otherwise noted A (Note 1) (Note 1) (Note 1) Reel Size 7’’ July 2002 = 5 Ω − DS(ON) GS DS(ON Ratings Units −60 V ±20 V −0.18 A −1 0.36 W mW/°C 2.9 −55 to +150 °C 300 °C 350 °C/W Tape width Quantity 8mm 3000 units NDS0605 Rev B1(W) ...
Page 2
Electrical Characteristics Symbol Parameter Off Characteristics BV Drain–Source Breakdown Voltage DSS ∆BV Breakdown Voltage Temperature DSS ∆T Coefficient J I Zero Gate Voltage Drain Current DSS I Gate–Body Leakage. GSS On Characteristics (Note 2) V Gate Threshold Voltage GS(th) ∆V ...
Page 3
Typical Characteristics 1.4 V =-10V -4.5V GS -4.0V -6.0V 1.2 1 0.8 0.6 0.4 0 DRAIN TO SOURCE VOLTAGE (V) DS Figure 1. On-Region Characteristics. 1 -0. ...
Page 4
Typical Characteristics -0. -12V 0.4 0.8 1 GATE CHARGE (nC) g Figure 7. Gate Charge Characteristics LIMIT DS(ON) 1 100ms 0.1 1s 10s ...
Page 5
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