NDS0605 Fairchild Semiconductor, NDS0605 Datasheet - Page 2

• Manufacturer Part Number: NDS0605
• Description: MOSFET P-CH 60V 180MA SOT-23
• Manufacturer: Fairchild Semiconductor

Specifications of NDS0605

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 5 Ohm @ 500mA, 10V
• Drain To Source Voltage (vdss): 60V
• Current - Continuous Drain (id) @ 25° C: 180mA
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 2.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 79pF @ 25V
• Power - Max: 360mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 5 Ohm @ 10 V
• Drain-source Breakdown Voltage: 60 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 0.18 A
• Power Dissipation: 360 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: NDS0605TR

Notes:
1.
Scale 1 : 1 on letter size paper
2.
Electrical Characteristics
Symbol
Off Characteristics
BV
∆BV
I
I
On Characteristics
V
∆V
R
I
g
Dynamic Characteristics
C
C
C
Switching Characteristics
t
t
t
t
Q
Q
Q
Drain–Source Diode Characteristics and Maximum Ratings
I
V
t
Q
R
DSS
GSS
D(on)
d(on)
r
d(off)
f
S
rr
FS
GS(th)
SD
∆T
∆T
DS(on)
iss
oss
rss
g
gs
gd
rr
R
the drain pins. R
Pulse Test: Pulse Width ≤ 300 µs, Duty Cycle ≤ 2.0%
G
GS(th)
DSS
θJA
DSS
J
J
is the sum of the junction-to-case and case-to-ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of
Drain–Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate–Body Leakage.
Gate Threshold Voltage
Gate Threshold Voltage
Temperature Coefficient
Static Drain–Source
On–Resistance
On–State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn–On Delay Time
Turn–On Rise Time
Turn–Off Delay Time
Turn–Off Fall Time
Total Gate Charge
Gate–Source Charge
Gate–Drain Charge
Maximum Continuous Drain–Source Diode Forward Current
Drain–Source Diode Forward
Voltage
Diode Reverse Recovery Time
Diode Reverse Recovery Charge
θJC
is guaranteed by design while R
a) 350°C/W when mounted on a
minimum pad..
Parameter
(Note 2)
(Note 2)
θCA
is determined by the user's board design.
V
I
V
V
V
V
I
V
V
V
V
V
V
f = 1.0 MHz
V
V
V
V
V
V
I
d
T
D
D
F
iF
A
GS
DS
DS
GS
DS
GS
GS
GS
GS
DS
DS
GS
DD
GS
DS
GS
GS
= –0.5A
= –10 µA,Referenced to 25°C
= –250 µA,Referenced to 25°C
/d
= 25°C unless otherwise noted
= –10 V,I
= 0 V,
= –48 V,
= –48 V,V
= ±20 V,
= V
= –10 V,
= –4.5 V, I
= –10 V,
= –10V,
= –25 V,
= –15 mV, f = 1.0 MHz
= –25 V,
= –10 V,
= –48 V,
= –10 V
= 0 V,
t
= 100 A/µs
Test Conditions
GS
,
D
GS
= –0.5 A,T
I
V
V
I
I
V
I
V
I
R
I
I
D
D
D
D
D
D
D
S
= 0 V T
DS
GS
DS
GEN
GS
= –10 µA
= –250 µA
= –0.5 A
= –0.25 A
= – 0.2 A
= – 0.2 A,
= –0.5 A,
= –0.5 A
= – 10 V
= 0 V
= 0 V
= 0 V,
= 6 Ω
J
= 125°C
J
=125°C
(Note 2)
(Note 2)
Min Typ Max Units
–0.6
0.07
–60
–1
–1.7
0.43
–0.8
–53
1.0
1.3
1.7
2.5
6.3
7.5
1.8
0.3
0.4
79
10
10
10
17
15
3
4
–500
±100
12.6
0.18
–1.5
5.0
7.5
2.5
–1
–3
10
20
15
5
–
NDS0610 Rev B1(W)
mV/°C
mV/°C
nC
nC
nC
nC
µA
µA
nA
pF
pF
pF
nS
ns
ns
ns
ns
Ω
Ω
V
V
A
S
A
V