BSO072N03S Infineon Technologies, BSO072N03S Datasheet

MOSFET N-CH 30V 12A DSO-8

BSO072N03S

Manufacturer Part Number
BSO072N03S
Description
MOSFET N-CH 30V 12A DSO-8
Manufacturer
Infineon Technologies
Series
OptiMOS™r
Datasheet

Specifications of BSO072N03S

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
6.8 mOhm @ 15A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
2V @ 45µA
Gate Charge (qg) @ Vgs
25nC @ 5V
Input Capacitance (ciss) @ Vds
3230pF @ 15V
Power - Max
1.56W
Mounting Type
Surface Mount
Package / Case
DSO-8
Configuration
Single Quad Drain Triple Source
Transistor Polarity
N-Channel
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
12 A
Power Dissipation
1560 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BSO072N03S
BSO072N03SINTR
BSO072N03SXT
SP000077647

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BSO072N03S
Manufacturer:
INFINEON
Quantity:
1 712
Part Number:
BSO072N03S
Manufacturer:
INFINEON/英飞凌
Quantity:
20 000
Rev. 1.6
Features
• Fast switching MOSFET for SMPS
• Optimized technology for notebook DC/DC converters
• Qualified according to JEDEC
• N-channel
• Logic level
• Excellent gate charge x R
• Very low on-resistance R
• Superior thermal resistance
• Avalanche rated
• Pb-free plating; RoHS compliant
Maximum ratings, at T
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
IEC climatic category; DIN IEC 68-1
OptiMOS
Type
BSO072N03S
®
2 Power-Transistor
j
Package
PG-DSO-8
=25 °C, unless otherwise specified
DS(on)
DS(on)
1)
product (FOM)
for target applications
Symbol Conditions
I
I
E
dv /dt
V
P
T
D
D,pulse
j
AS
GS
tot
, T
Marking
72N3S
stg
T
T
T
I
I
di /dt =200 A/µs,
T
T
D
D
page 1
A
A
A
j,max
A
=15 A, R
=15 A, V
=25 °C
=70 °C
=25 °C
=25 °C
=150 °C
2)
2)
3)
2)
DS
GS
=20 V,
=25 Ω
Product Summary
V
R
I
D
DS
DS(on),max
10 secs
2.5
15
12
-55 ... 150
55/150/56
Value
145
±20
PG-DSO-8
60
6
steady state
1.56
BSO072N03S
9.6
12
30
6.8
15
Unit
A
mJ
kV/µs
V
W
°C
V
mΩ
A
2008-01-16

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BSO072N03S Summary of contents

Page 1

... Symbol Conditions =25 ° =70 ° =25 °C D,pulse A =25 Ω = = = /dt di /dt =200 A/µs, T =150 °C j,max =25 °C tot stg page 1 BSO072N03S 30 V 6.8 mΩ PG-DSO-8 Value Unit 10 secs steady state 9.6 60 145 mJ 6 kV/µs ±20 V 2.5 1.56 W -55 ... 150 °C 55/150/56 2008-01-16 ...

Page 2

... GS(th = DSS T =25 ° = =125 ° = GSS =4 =13 A DS( |>2 DS(on)max = (one layer, 70 µm thick) copper area for drain page 2 BSO072N03S Values Unit min. typ. max K 110 - - 150 , - - 1.2 1 0.1 1 µ 100 - 10 100 nA - 7.4 9.3 mΩ - 5.7 6.8 Ω ...

Page 3

... =2.7 Ω d(off g( plateau V =0 g(sync = oss =25 ° S,pulse =2 =25 ° = /dt =400 A/µs F page 3 BSO072N03S Values Unit min. typ. max. - 2430 3230 pF - 865 1150 - 110 160 - 6 5.4 8 4.0 6.0 - 6.6 8 3.9 5.2 - 4.5 6 2008-01-16 ...

Page 4

... Rev. 1.6 2 Drain current I =f 120 160 0 [° Max. transient thermal impedance Z =f(t thJS p parameter 100 10 µs 100 µ 0.1 0. 0.01 10 100 0.00001 [V] DS page 4 BSO072N03S ≥ ≤ 120 T [° single pulse 0.0001 0.001 0.01 0 [s] p 160 2008-01-16 ...

Page 5

... DS j parameter 4 3 Typ. transfer characteristics I =f |>2 DS(on)max parameter Rev. 1.6 6 Typ. drain-source on resistance R =f(I DS(on) parameter 3 3 2 Typ. forward transconductance g =f 125 °C 25 ° [V] GS page 5 BSO072N03S ); T =25 ° 3.6 V 3 4 [A] D =25 ° [ 2008-01-16 ...

Page 6

... GS(th) parameter: I 2.5 2 1.5 typ 1 0 100 140 180 -60 [° Forward characteristics of reverse diode I =f parameter 100 Crss 0 [V] DS page 6 BSO072N03S ); 450 µA 45 µA - 100 140 T [° 150 °C 25 °C 150 ° °C, 98% 0.2 0.4 0.6 0 [V] SD 180 1.2 2008-01-16 ...

Page 7

... AV GS parameter: T j(start) 100 Drain-source breakdown voltage V =f BR(DSS -60 - Rev. 1.6 14 Typ. gate charge V =f(Q GS parameter °C 6 100 °C 125 ° 100 1000 [µ Gate charge waveforms s(th) Q g(th) 60 100 140 180 [°C] j page 7 BSO072N03S ); I =7.5 A pulsed gate [nC] gate ate 2008-01-16 ...

Page 8

... Package Outline Rev. 1.6 PG-DSO-8 page 8 BSO072N03S 2008-01-16 ...

Page 9

... Life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user Rev. 1.6 page 9 BSO072N03S 2008-01-16 ...

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