SPD08N50C3 Infineon Technologies, SPD08N50C3 Datasheet

MOSFET N-CH 560V 7.6A DPAK

SPD08N50C3

Manufacturer Part Number
SPD08N50C3
Description
MOSFET N-CH 560V 7.6A DPAK
Manufacturer
Infineon Technologies
Series
CoolMOS™r
Datasheet

Specifications of SPD08N50C3

Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
600 mOhm @ 4.6A, 10V
Drain To Source Voltage (vdss)
560V
Current - Continuous Drain (id) @ 25° C
7.6A
Vgs(th) (max) @ Id
3.9V @ 350µA
Gate Charge (qg) @ Vgs
32nC @ 10V
Input Capacitance (ciss) @ Vds
750pF @ 25V
Power - Max
83W
Mounting Type
Surface Mount
Minimum Operating Temperature
- 55 C
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.6 Ohm @ 10 V
Drain-source Breakdown Voltage
500 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
7.6 A
Power Dissipation
83000 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Continuous Drain Current Id
7.6A
Drain Source Voltage Vds
560V
On Resistance Rds(on)
600mohm
Rds(on) Test Voltage Vgs
10V
Threshold Voltage Vgs Typ
3V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
SP000013835
SP000307395
SPD08N50C3INTR
SPD08N50C3XT
SPD08N50C3XTINTR
SPD08N50C3XTINTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPD08N50C3
Manufacturer:
infineon
Quantity:
539
Part Number:
SPD08N50C3
Manufacturer:
INFINEON
Quantity:
30 000
Part Number:
SPD08N50C3ATMA1
Manufacturer:
INFINEON/英飞凌
Quantity:
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Rev. 2.5
Cool MOS™ Power Transistor
Feature
Type
SPD08N50C3
Maximum Ratings, at T
Parameter
Continuous drain current
T
T
Pulsed drain current, t
Avalanche energy, single pulse
I
Avalanche energy, repetitive t
I
Avalanche current, repetitive t
Gate source voltage
Gate source voltage AC (f >1Hz)
Power dissipation,
Operating and storage temperature
Reverse diode dv/dt
D
D
C
C
New revolutionary high voltage technology
Periodic avalanche rated
Ultra low effective capacitances
Improved transconductance
Worldwide best R
Ultra low gate charge
Extreme dv/dt rated
=5.5A, V
=7.6A, V
= 25 °C
= 100 °C
DD
DD
=50V
=50V
T
DS(on)
Package
PG-TO252
C
6)
= 25°C
p
limited by T
C
in TO-252
= 25°C, unless otherwise specified
AR
AR
limited by T
limited by T
jmax
Ordering Code
Q67040-S4569
Page 1
jmax
jmax
1)
dv/dt
Symbol
I
I
E
E
I
V
V
P
T
D
D puls
AR
j ,
AS
AR
GS
GS
tot
Marking
08N50C3
T
stg
V
DS
R
DS(on)
@ T
I
D
-55... +150
Value
jmax
22.8
±20
230
7.6
4.6
0.5
7.6
15
83
30
SPD08N50C3
PG-TO252
2008-04-11
560
0.6
7.6
Unit
A
mJ
A
V
W
°C
V/ns
V
A

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SPD08N50C3 Summary of contents

Page 1

... Gate source voltage AC (f >1Hz) Power dissipation 25°C C Operating and storage temperature 6) Reverse diode dv/dt Rev. 2.5 in TO-252 Ordering Code Q67040-S4569 = 25°C, unless otherwise specified jmax 1) limited jmax limited jmax Page 1 SPD08N50C3 @ jmax R DS(on PG-TO252 Marking 08N50C3 Symbol Value I D 7.6 4.6 22 puls 230 ...

Page 2

... DS I =500V, V =0V, V DSS DS GS =25° =150° =20V, V =0V V GSS GS DS =10V, I =4.6A, V DS(on =25° =150° f=1MHz, open Drain R G Page 2 SPD08N50C3 Value Unit 50 V/ns Values Unit min. typ. max 1.5 K 260 °C Values Unit min. typ. max. 500 - - V - ...

Page 3

... =7.6A d(off =400V, I =7. =400V, I =7.6A 10V =400V, I =7. (plateau) DD =400V, V < <T peak BR, DSS j j,max Page 3 SPD08N50C3 Values min. typ. max 750 - 350 - =0/10V * while V is rising from 0 to 80% V oss DS while V is rising from 0 to 80% V oss DS . 2008-04-11 ...

Page 4

... /dt=100A/µ rrm di /dt rr Unit Symbol Thermal capacitance K/W C th1 C th2 C th3 C th4 C th5 C th6 th1 th th1 th2 th,n Page 4 SPD08N50C3 Values min. typ 370 = 3 700 Value typ. 0.00012 0.0004578 0.000645 0.001867 0.004795 0.045 E xternal H eatsink T case Unit max. 7.6 A 22.8 1 ...

Page 5

... C SPD08N50C3 100 Transient thermal impedance thJC p parameter K Rev. 2.5 2 Safe operating area parameter : °C 100 120 160 Typ. output characteristic parameter 0.01 single pulse - Page 5 SPD08N50C3 ) DS =25° 0.001 0. 0 =25° µ 20V 10V 2008-04- 6,5V 6V 5, ...

Page 6

... SPD08N50C3 3.4 2.8 2.4 2 1.6 1.2 98% 0.8 typ 0.4 0 -60 - Rev. 2.5 6 Typ. drain-source on resistance R DS(on) parameter 5. 4. Typ. transfer characteristics parameter °C 100 180 T j Page 6 SPD08N50C3 = =150° 4. DS(on)max = 10 µs p 25° 2008-04-11 6V 6.5V 8V 20V 150° ...

Page 7

... T j (START Rev. 2.5 10 Forward characteristics of body diode parameter Gate 12 Avalanche energy E AS par =25° (START µ Page 7 SPD08N50C3 ) µ SPD08N50C3 °C typ 150 °C typ °C (98 150 °C (98 0.4 0.8 1 260 220 200 180 160 140 120 100 100 2 ...

Page 8

... Crss 100 200 Rev. 2.5 14 Avalanche power losses P AR parameter: E 500 W 300 200 100 100 °C 180 Typ oss µJ 300 V 500 V DS Page 8 SPD08N50C3 = =0.5mJ stored energy oss ) 2.5 2 1 100 200 300 6 10 MHz f V 500 V DS 2008-04-11 ...

Page 9

... Definition of diodes switching characteristics Rev. 2.5 Page 9 SPD08N50C3 2008-04-11 ...

Page 10

... PG-TO252-3-1, PG-TO252-3-11, PG-TO252-3-21 (D-PAK) Rev. 2.5 Page 10 SPD08N50C3 2008-04-11 ...

Page 11

... Rev. 2.5 Page 11 SPD08N50C3 2008-04-11 ...

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