FDZ193P Fairchild Semiconductor, FDZ193P Datasheet - Page 2

• Manufacturer Part Number: FDZ193P
• Description: MOSFET P-CH 20V 3A 8-WLCSP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDZ193P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 6-WLCSP
• Configuration: Single Dual Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 5.6 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3 A
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDZ193PTR

FDZ193P Rev.C2 (W)
Electrical Characteristics
Off Characteristics
On Characteristics
Dynamic Characteristics
Switching Characteristics
Drain-Source Diode Characteristics
Notes:
1: R
2: Pulse Test: Pulse Width < 300 s, Duty cycle < 2.0%.
BV
I
I
V
r
I
g
C
C
C
R
t
t
t
t
Q
Q
Q
I
V
t
Q
DSS
GSS
D(on)
d(on)
r
d(off)
f
S
rr
DS(on)
FS
BV
GS(th)
iss
oss
rss
g
SD
g(TOT)
gs
gd
rr
V
side of the solder ball, R
are guaranteed by design while R
Symbol
DSS
T
T
GS(th)
JA
DSS
J
J
is determined with the device mounted on a 1in
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
Zero Gate Voltage Drain Current
Gate to Source Leakage Current
Gate to Source Threshold Voltage
Gate to Source Threshold Voltage
Temperature Coefficient
Drain to Source On Resistance
On to State Drain Current
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Gate Resistance
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Gate Charge at 10V
Gate to Source Gate Charge
Gate to Drain “Miller” Charge
Maximum continuous Drain-Source Diode Forward Current
Source to Drain Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
JB
is defined for reference. For R
JA
is determined by the user's board design.
Parameter
a. 65°C/W when mounted on
a 1 in
X 1.5” X 0.062” thick PCB
2
T
pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. The thermal resistance from the junction to the circuit board
J
2
pad of 2 oz copper,1.5”
= 25°C unless otherwise noted
JC
the thermal reference point for the case is defined as the top surface of the copper chip carrier. R
V
V
V
V
f = 1MHz
f = 1MHz
V
I
V
V
V
V
V
V
V
I
I
I
V
V
D
F
D
D
DS
DD
GS
GS
GS
GS
GS
GS
GS
GS
DS
GS
DS
GS
= -1A, di/dt = 100A/ s
= -250 A, referenced to 25°C
= -250 A, V
= -250 A, referenced to 25°C
= 0V to 10V V
= -10V, V
= -10V, I
= -4.5V, R
= V
= -4.5V, I
= -2.5V, I
= -1.7V, I
= -4.5V, I
= -4.5V, V
= -5V, I
= 0V, I
= -16V, V
= ±12V, V
2
DS
Test Conditions
, I
S
D
D
= -1.1A
D
GS
= -1A
D
D
GS
= -1A
GEN
GS
GS
= -250 A
D
D
DS
= -1A
= -1A T
= -1A
= -1A
= 0V,
= 0V
= 0V
= 0V
I
= -5V
D
DD
= 6
= -1A
= -10V
(Note 2)
J
= 125°C
b. 133°C/W when mounted on a
minimum pad of 2 oz copper
-0.6
Min
-10
-20
-0.7
660
150
-0.9
195
9.5
Typ
5.6
90
13
10
28
21
19
66
92
84
-11
7
1
2
6
3
±100
-1.1
-1.2
Max
-1.5
130
300
123
90
23
20
45
34
10
-1
www.fairchildsemi.com
JC
mV/°C
mV/°C
Units
and R
m
nC
pF
pF
pF
nC
nC
nC
ns
nA
ns
ns
ns
ns
V
A
S
A
V
V
A
JB