FDZ193P Fairchild Semiconductor, FDZ193P Datasheet - Page 4

• Manufacturer Part Number: FDZ193P
• Description: MOSFET P-CH 20V 3A 8-WLCSP
• Manufacturer: Fairchild Semiconductor
• Series: PowerTrench®r

Specifications of FDZ193P

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 90 mOhm @ 1A, 4.5V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 3A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 10nC @ 10V
• Input Capacitance (ciss) @ Vds: 660pF @ 10V
• Power - Max: 900mW
• Mounting Type: Surface Mount
• Package / Case: 6-WLCSP
• Configuration: Single Dual Drain Triple Source
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.09 Ohm @ 4.5 V
• Forward Transconductance Gfs (max / Min): 5.6 S
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: +/- 12 V
• Continuous Drain Current: 3 A
• Power Dissipation: 1900 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: FDZ193PTR

FDZ193P Rev.C2 (W)
Typical Characteristics
3.5
3.0
2.5
2.0
1.5
1.0
0.5
0.0
Figure 7. Gate Charge Characteristics
Figure 9. Maximum Continuous Drain
5
4
3
2
1
0
25
0
Current vs Ambient Temperature
0.5
10
50
10
1
-3
I
R
D
= -1A
JA
50
2
= 65
T
A
, CASE TEMPERATURE
Q
o
C/W
g
, GATE CHARGE(nC)
V
V
DD
GS
75
4
= 10V
= -5V
10
Figure 11. Single Pulse Maximum Power Dissipation
-2
V
V
SINGLE PULSE
GS
GS
T
100
= -4.5V
V
= -2.5V
J
DD
6
= 25°C unless otherwise noted
= -15V
V
(
DD
o
C
125
= -10V
)
8
10
-1
t, PULSE WIDTH (s)
150
10
4
10
0
0.01
0.1
2000
1000
10
30
100
1
50
0.1
0.1
OPERATION IN THIS
AREA MAY BE
LIMITED BY r
SINGLE PULSE
T J = MAX RATED
R
T A = 25
Figure 8. Capacitance vs Drain
Figure 10. Forward Bias Safe
JA
f = 1MHz
V
GS
= 133
-V
O
= 0V
-V
C
10
DS
o
DS
C/W
to Source Voltage
1
, DRAIN TO SOURCE VOLTAGE (V)
DS(on)
, DRAIN to SOURCE VOLTAGE (V)
Operating Area
1
FOR TEMPERATURES
ABOVE 25
CURRENT AS FOLLOWS:
1
I = I
25
10
o
C DERATE PEAK
150 T
----------------------- -
2
C
C
C
rss
oss
125
iss
–
10
A
T
A
= 25
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100ms
10
100us
10ms
1s
10s
DC
o
1ms
C
10
80
20
3