TPCF8104(TE85L,F,M Toshiba, TPCF8104(TE85L,F,M Datasheet - Page 3

• Manufacturer Part Number: TPCF8104(TE85L,F,M
• Description: MOSFET P-CH -30V -6A VS-8
• Manufacturer: Toshiba

Specifications of TPCF8104(TE85L,F,M

• Fet Type: MOSFET P-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 28 mOhm @ 3A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 6A
• Vgs(th) (max) @ Id: 2V @ 1mA
• Gate Charge (qg) @ Vgs: 34nC @ 10V
• Input Capacitance (ciss) @ Vds: 1760pF @ 10V
• Power - Max: 700mW
• Mounting Type: Surface Mount
• Package / Case: VS-8 (2-3U1A)
• Configuration: Single Hex Drain
• Transistor Polarity: P-Channel
• Resistance Drain-source Rds (on): 0.028 Ohms
• Drain-source Breakdown Voltage: - 30 V
• Gate-source Breakdown Voltage: +/- 20 V
• Continuous Drain Current: 6 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: TPCF8104(TE85L,F); TPCF8104FMTR; TPCF8104FTR; TPCF8104FTR

Electrical Characteristics
Source-Drain Ratings and Characteristics
Gate leakage current
Drain cut-off current
Drain-source breakdown voltage
Gate threshold voltage
Drain-source ON resistance
Forward transfer admittance
Input capacitance
Reverse transfer capacitance
Output capacitance
Switching time
Total gate charge
(gate-source plus gate-drain)
Gate-source charge1
Gate-drain (“miller”) charge
Drain reverse
current
Forward voltage (diode)
Characteristics
Characteristics
Pulse (Note 1)
Rise time
Turn-on time
Fall time
Turn-off time
(Ta = 25°C)
Symbol
V
I
DRP
DSF
V
V
R
Symbol
(BR) DSS
(BR) DSX
DS (ON)
Q
I
I
C
|Y
C
C
Q
GSS
DSS
V
t
t
Q
oss
on
off
gs1
rss
t
t
iss
gd
I
th
fs
r
f
g
DR
|
= −6.0 A, V
V
V
I
I
V
V
V
V
V
Duty < = 1%, t
V
I
V
D
D
D
GS
DS
DS
GS
GS
DS
DS
DD
GS
= −10 mA, V
= −10 mA, V
= −6.0 A
3
−10 V
(Ta = 25°C)
= −30 V, V
= −10 V, I
= −10 V, I
= −10 V, V
= ±16 V, V
= −4.5 V, I
= −10 V, I
∼ − −24 V, V
0 V
Test Condition
GS
= 0 V
Test Condition
w
⎯
D
D
= 10 µs
D
GS
GS
D
GS
GS
DS
GS
= −1mA
= −3.0A
= −3.0A
= −3.0 A
V
= 0 V
= 20 V
I
= 0 V
= 0 V
= 0 V, f = 1 MHz
= −10V,
D
DD
= −3.0 A
∼ − −15 V
V
OUT
−0.8
Min
Min
−30
−15
4.8
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
1760
Typ.
Typ.
200
210
9.6
2.8
4.7
7.2
⎯
⎯
⎯
⎯
⎯
29
21
12
22
90
34
⎯
⎯
TPCF8104
2006-11-16
Max
−2.0
Max
−24
±10
−10
1.2
38
28
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
⎯
Unit
Unit
mΩ
µA
µA
pF
nC
ns
V
V
S
A
V