AO4474 Alpha & Omega Semiconductor Inc, AO4474 Datasheet
AO4474
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AO4474 Summary of contents
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... AO4474 N-Channel Enhancement Mode Field Effect Transistor General Description The AO4474/L uses advanced trench technology to provide excellent R , low gate charge.This device DS(ON) is suitable for use as a high side switch in SMPS and general purpose applications. AO4474 and AO4474L are electrically identical. -RoHS Compliant ...
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... AO4474 Electrical Characteristics (T =25°C unless otherwise noted) J Symbol Parameter STATIC PARAMETERS BV Drain-Source Breakdown Voltage DSS I Zero Gate Voltage Drain Current DSS I Gate-Body leakage current GSS V Gate Threshold Voltage GS(th state drain current D(ON) R Static Drain-Source On-Resistance DS(ON) g Forward Transconductance FS V Diode Forward Voltage ...
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... AO4474 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 10V (Volts) DS Fig 1: On-Region Characteristics =4. =10V (A) D Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Volts) GS Figure 5: On-Resistance vs. Gate-Source Voltage Alpha & Omega Semiconductor, Ltd =2. 1.8 1.6 1.4 1.2 1 0.8 0 1.0E+02 1.0E+01 =13.4A 1.0E+00 125° ...
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... AO4474 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 V =15V DS I =13. (nC) g Figure 7: Gate-Charge Characteristics 100 In descending order T =25°C, 100°C, 125°C, 150° 0.001 0.01 0.1 1 Time in Avalache, t Figure 9: Single Pulse Avalanche Capability 140 120 100 0.001 0.01 Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note G) Alpha & ...
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... AO4474 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 D θJA θJA J, =34°C/W 1 θJA 0.1 0.01 Single Pulse 0.001 0.00001 0.0001 0.001 Figure 12: Normalized Maximum Transient Thermal Impedance (Note G) Alpha & Omega Semiconductor, Ltd. In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse ...