SIB452DK-T1-GE3 Vishay, SIB452DK-T1-GE3 Datasheet - Page 3

• Manufacturer Part Number: SIB452DK-T1-GE3
• Description: MOSFET N-CH 190V 1.5A SC75-6
• Manufacturer: Vishay

Specifications of SIB452DK-T1-GE3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.4 Ohm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 190V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 135pF @ 50V
• Power - Max: 13W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-75-6L
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Dual Source
• Resistance Drain-source Rds (on): 2.4 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 190 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 0.67 A
• Power Dissipation: 2400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 1.5A
• Drain Source Voltage Vds: 190V
• On Resistance Rds(on): 2.4ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIB452DK-T1-GE3TR

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
Document Number: 68832
S-81724-Rev. A, 04-Aug-08
4.0
3.5
3.0
2.5
2.0
1.5
1.0
1.5
1.2
0.9
0.6
0.3
0.0
10
On-Resistance vs. Drain Current and Gate Voltage
8
6
4
2
0
0.0
0
0
I
D
= 0.7 A
V
GS
0.3
1
1
V
DS
= 1.8 V
Output Characteristics
Q
- Drain-to-Source Voltage (V)
g
- Total Gate Charge (nC)
I
D
V
Gate Charge
DS
- Drain Current (A)
0.6
2
2
= 95 V
V
V
GS
GS
0.9
3
3
= 4.5 V
= 2.5 V
V
V
DS
V
GS
GS
= 152 V
= 5 thru 2 V
1.2
= 1 V
4
4
New Product
1.5
5
5
210
180
150
120
1.0
0.8
0.6
0.4
0.2
0.0
2.4
2.0
1.6
1.2
0.8
0.4
90
60
30
0
- 50
0.0
0
C
rss
On-Resistance vs. Junction Temperature
- 25
10
V
V
0.5
Transfer Characteristics
GS
DS
V
T
0
C
GS
J
C
oss
- Gate-to-Source Voltage (V)
iss
- Drain-to-Source Voltage (V)
- Junction Temperature (°C)
= 4.5 V, 2.5 V; I
25
Capacitance
20
T
C
1.0
= 125 °C
50
Vishay Siliconix
T
V
C
GS
30
= 25 °C
D
75
SiB452DK
= 1.8 V; I
= 0.5 A
www.vishay.com
100
1.5
40
D
T
C
= 0.2 A
125
= - 55 °C
150
2.0
50
3