SIB452DK-T1-GE3 Vishay, SIB452DK-T1-GE3 Datasheet - Page 4

• Manufacturer Part Number: SIB452DK-T1-GE3
• Description: MOSFET N-CH 190V 1.5A SC75-6
• Manufacturer: Vishay

Specifications of SIB452DK-T1-GE3

• Transistor Polarity: N-Channel
• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 2.4 Ohm @ 500mA, 4.5V
• Drain To Source Voltage (vdss): 190V
• Current - Continuous Drain (id) @ 25° C: 1.5A
• Vgs(th) (max) @ Id: 1.5V @ 250µA
• Gate Charge (qg) @ Vgs: 6.5nC @ 10V
• Input Capacitance (ciss) @ Vds: 135pF @ 50V
• Power - Max: 13W
• Mounting Type: Surface Mount
• Package / Case: PowerPAK® SC-75-6L
• Minimum Operating Temperature: - 55 C
• Configuration: Single Quad Drain Dual Source
• Resistance Drain-source Rds (on): 2.4 Ohm @ 4.5 V
• Drain-source Breakdown Voltage: 190 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 0.67 A
• Power Dissipation: 2400 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Continuous Drain Current Id: 1.5A
• Drain Source Voltage Vds: 190V
• On Resistance Rds(on): 2.4ohm
• Rds(on) Test Voltage Vgs: 4.5V
• Threshold Voltage Vgs Typ: 1.5V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: SIB452DK-T1-GE3TR

SiB452DK
Vishay Siliconix
TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted
www.vishay.com
4
0.01
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.1
10
- 50
1
0.0
- 25
Soure-Drain Diode Forward Voltage
0.2
V
SD
0
T
J
Threshold Voltage
- Source-to-Drain Voltage (V)
T
= 150 °C
J
25
- Temperature (°C)
0.4
50
I
D
0.6
75
= 250 µA
0.001
0.01
0.1
10
100
1
1
T
0.8
J
Limited by R
Limited
* V
Safe Operating Area, Junction-to-Ambient
I
= 25 °C
Single Pulse
125
D(on)
T
A
GS
= 25 °C
> minimum V
V
150
New Product
1.0
DS
DS(on)
- Drain-to-Source Voltage (V)
10
*
BVDSS Limited
GS
I
at which R
DM
Limited
100
DS(on)
20
10
15
5
0
0.001
8
6
4
2
0
is specified
100 µs
1 ms
0
10 ms
100 ms
1 s, 10 s
DC
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
0.01
1000
2
V
GS
- Gate-to-Source Voltage (V)
0.1
4
Pulse (s)
1
S-81724-Rev. A, 04-Aug-08
Document Number: 68832
6
10
I
D
T
= 0.5 A
T
J
J
= 125 °C
8
= 25 °C
100
1000
10