STD17NF03LT4 STMicroelectronics, STD17NF03LT4 Datasheet - Page 4

• Manufacturer Part Number: STD17NF03LT4
• Description: MOSFET N-CH 30V 17A DPAK
• Manufacturer: STMicroelectronics
• Series: STripFET™r

Specifications of STD17NF03LT4

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 50 mOhm @ 8.5A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 17A
• Vgs(th) (max) @ Id: 2.2V @ 250µA
• Gate Charge (qg) @ Vgs: 6.5nC @ 5V
• Input Capacitance (ciss) @ Vds: 320pF @ 25V
• Power - Max: 30W
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Configuration: Single
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 0.038 Ohms
• Forward Transconductance Gfs (max / Min): 12 S
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: +/- 16 V
• Continuous Drain Current: 17 A
• Power Dissipation: 30 W
• Maximum Operating Temperature: + 175 C
• Mounting Style: SMD/SMT
• Minimum Operating Temperature: - 55 C
• Continuous Drain Current Id: 17A
• Drain Source Voltage Vds: 30V
• On Resistance Rds(on): 50mohm
• Rds(on) Test Voltage Vgs: 16V
• Threshold Voltage Vgs Typ: 1.5V
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 497-3155-2

Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
V
Symbol
Symbol
CASE
R
V
(BR)DSS
g
t
t
I
C
I
C
GS(th)
DS(on)
C
Q
d(on)
d(off)
Q
DSS
GSS
fs
Q
oss
t
t
iss
rss
gs
gd
r
f
(1)
g
=25°C unless otherwise specified)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
T
V
V
V
V
V
R
V
V
V
R
(see
V
V
(see
D
C
DS
DS
GS
DS
GS
GS
GS
GS
DS
DS
DD
DD
DS(on)max
G
= 250µA, V
= 125°C
Test conditions
= 4.7Ω V
Test conditions
= Max rating
= Max rating,
= ± 16V
= V
= 10V, I
= 5V, I
> I
= 25V, f = 1MHz,
= 0
= 15V, I
= 3024V, I
= 5V, R
Figure
Figure
D(on)
GS
, I
,
D
,
G
13)
14)
D
GS
D
x
D
= 8.5A
I
D
GS
= 4.7Ω
= 8.5A
= 8.5A
= 250µA
D
=8.5A
= 5V
= 17A,
=0
STD17NF03L - STD17NF03L-1
Min.
Min.
30
1
0.038
0.045
Typ.
Typ.
2.25
320
155
100
1.5
4.8
1.7
12
28
11
25
22
Max.
Max.
±100
0.05
0.06
6.5
2.2
10
1
Unit
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
S
V
V
Ω
Ω