STD17NF03LT4 STMicroelectronics, STD17NF03LT4 Datasheet - Page 4
![MOSFET N-CH 30V 17A DPAK](/photos/5/30/53090/497-dpak_to-252_sml.jpg)
STD17NF03LT4
Manufacturer Part Number
STD17NF03LT4
Description
MOSFET N-CH 30V 17A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STD17NF03LT4.pdf
(14 pages)
Specifications of STD17NF03LT4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
6.5nC @ 5V
Input Capacitance (ciss) @ Vds
320pF @ 25V
Power - Max
30W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.038 Ohms
Forward Transconductance Gfs (max / Min)
12 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
17 A
Power Dissipation
30 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
17A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
50mohm
Rds(on) Test Voltage Vgs
16V
Threshold Voltage Vgs Typ
1.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3155-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD17NF03LT4
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STD17NF03LT4-E
Manufacturer:
SANSUNG
Quantity:
1 041
Electrical characteristics
2
4/14
Electrical characteristics
(T
Table 3.
Table 4.
1. Pulsed: Pulse duration = 300 µs, duty cycle 1.5%.
V
Symbol
Symbol
CASE
R
V
(BR)DSS
g
t
t
I
C
I
C
GS(th)
DS(on)
C
Q
d(on)
d(off)
Q
DSS
GSS
fs
Q
oss
t
t
iss
rss
gs
gd
r
f
(1)
g
=25°C unless otherwise specified)
Forward
transconductance
Input capacitance
Output capacitance
Reverse transfer
capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Total gate charge
Gate-source charge
Gate-drain charge
Drain-source
breakdown voltage
Zero gate voltage
drain current (V
Gate-body leakage
current (V
Gate threshold voltage
Static drain-source on
resistance
On/off states
Dynamic
Parameter
Parameter
DS
= 0)
GS
= 0)
I
V
V
T
V
V
V
V
V
R
V
V
V
R
(see
V
V
(see
D
C
DS
DS
GS
DS
GS
GS
GS
GS
DS
DS
DD
DD
DS(on)max
G
= 250µA, V
= 125°C
Test conditions
= 4.7Ω V
Test conditions
= Max rating
= Max rating,
= ± 16V
= V
= 10V, I
= 5V, I
> I
= 25V, f = 1MHz,
= 0
= 15V, I
= 3024V, I
= 5V, R
Figure
Figure
D(on)
GS
, I
,
D
,
G
13)
14)
D
GS
D
x
D
= 8.5A
I
D
GS
= 4.7Ω
= 8.5A
= 8.5A
= 250µA
D
=8.5A
= 5V
= 17A,
=0
STD17NF03L - STD17NF03L-1
Min.
Min.
30
1
0.038
0.045
Typ.
Typ.
2.25
320
155
100
1.5
4.8
1.7
12
28
11
25
22
Max.
Max.
±100
0.05
0.06
6.5
2.2
10
1
Unit
Unit
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
µA
µA
nA
S
V
V
Ω
Ω