STD17NF03LT4 STMicroelectronics, STD17NF03LT4 Datasheet - Page 7
![MOSFET N-CH 30V 17A DPAK](/photos/5/30/53090/497-dpak_to-252_sml.jpg)
STD17NF03LT4
Manufacturer Part Number
STD17NF03LT4
Description
MOSFET N-CH 30V 17A DPAK
Manufacturer
STMicroelectronics
Series
STripFET™r
Datasheet
1.STD17NF03LT4.pdf
(14 pages)
Specifications of STD17NF03LT4
Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
50 mOhm @ 8.5A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
17A
Vgs(th) (max) @ Id
2.2V @ 250µA
Gate Charge (qg) @ Vgs
6.5nC @ 5V
Input Capacitance (ciss) @ Vds
320pF @ 25V
Power - Max
30W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
0.038 Ohms
Forward Transconductance Gfs (max / Min)
12 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 16 V
Continuous Drain Current
17 A
Power Dissipation
30 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Continuous Drain Current Id
17A
Drain Source Voltage Vds
30V
On Resistance Rds(on)
50mohm
Rds(on) Test Voltage Vgs
16V
Threshold Voltage Vgs Typ
1.5V
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
497-3155-2
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
STD17NF03LT4
Manufacturer:
ST
Quantity:
20 000
Company:
Part Number:
STD17NF03LT4-E
Manufacturer:
SANSUNG
Quantity:
1 041
STD17NF03L - STD17NF03L-1
Figure 7.
Figure 9.
Figure 11. Source-drain diode forward
Gate charge vs. gate-source voltage Figure 8.
Normalized gate threshold voltage
vs. temperature
characteristics
Figure 10. Normalized on resistance vs.
Figure 12. Normalized breakdown voltage vs.
Capacitance variations
temperature
temperature
Electrical characteristics
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