IRF8736TRPBF International Rectifier, IRF8736TRPBF Datasheet

MOSFET N-CH 30V 18A 8-SOIC

IRF8736TRPBF

Manufacturer Part Number
IRF8736TRPBF
Description
MOSFET N-CH 30V 18A 8-SOIC
Manufacturer
International Rectifier
Series
HEXFET®r
Datasheet

Specifications of IRF8736TRPBF

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
4.8 mOhm @ 18A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
18A
Vgs(th) (max) @ Id
2.35V @ 50µA
Gate Charge (qg) @ Vgs
26nC @ 4.5V
Input Capacitance (ciss) @ Vds
2315pF @ 15V
Power - Max
2.5W
Mounting Type
Surface Mount
Package / Case
8-SOIC (3.9mm Width)
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
6.8 mOhms
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
20 V
Continuous Drain Current
18 A
Power Dissipation
2.5 W
Mounting Style
SMD/SMT
Gate Charge Qg
17 nC
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
IRF8736TRPBFTR

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Applications
l
l
Benefits
l
l
l
l
l
www.irf.com
Notes  through
V
V
I
I
I
P
P
T
T
R
R
Absolute Maximum Ratings
Thermal Resistance
D
D
DM
DS
GS
D
D
J
STG
θJL
θJA
and Current
@ T
@ T
Synchronous MOSFET for Notebook
Synchronous Rectifier MOSFET for
Very Low R
Low Gate Charge
Fully Characterized Avalanche Voltage
100% Tested for R
Lead -Free
Processor Power
@T
@T
Networking Systems
Isolated DC-DC Converters in
A
A
A
A
= 25°C
= 70°C
= 25°C
= 70°C
DS(on)
Drain-to-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, V
Continuous Drain Current, V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
Operating Junction and
Storage Temperature Range
Junction-to-Drain Lead
Junction-to-Ambient
at 4.5V V
are on page 9
G
Parameter
Parameter
f
f
GS
fg
g
GS
GS
@ 10V
@ 10V
G
S
S
S
V
30V 4.8m @V
DSS
1
2
3
4
Top View
Typ.
–––
–––
-55 to + 150
R
HEXFET
8
7
6
5
IRF8736PbF
DS(on)
Max.
14.4
0.02
± 20
144
2.5
1.6
30
18
D
D
D
D
A
A
GS
max
Max.
®
20
50
= 10V
Power MOSFET
SO-8
Qg Typ.
17nC
Units
Units
W/°C
°C/W
08/1/07
°C
W
V
A
1

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IRF8736TRPBF Summary of contents

Page 1

Applications Synchronous MOSFET for Notebook l Processor Power Synchronous Rectifier MOSFET for l Isolated DC-DC Converters in Networking Systems Benefits Very Low DS(on) Low Gate Charge l Fully Characterized Avalanche Voltage l and Current 100% ...

Page 2

IRF8736PbF Static @ T = 25°C (unless otherwise specified) J Parameter BV Drain-to-Source Breakdown Voltage DSS ∆ΒV /∆T Breakdown Voltage Temp. Coefficient DSS J R Static Drain-to-Source On-Resistance DS(on) V Gate Threshold Voltage GS(th) ∆V Gate Threshold Voltage Coefficient GS(th) ...

Page 3

PULSE WIDTH Tj = 25°C 0.001 0 Drain-to-Source Voltage (V) Fig 1. Typical Output Characteristics 1000 100 150° 25°C ...

Page 4

IRF8736PbF 10000 0V MHZ C iss = SHORTED C rss = oss = Ciss 1000 Coss Crss 100 ...

Page 5

Ambient Temperature (°C) Fig 9. Maximum Drain Current Vs. Ambient Temperature 100 D = 0.50 10 0.20 0.10 0.05 0.02 1 0.01 0.1 SINGLE PULSE ( THERMAL ...

Page 6

IRF8736PbF D.U 20V 0.01 Ω Fig 12a. Unclamped Inductive Test Circuit Fig 12b. Unclamped Inductive Waveforms Current Regulator Same Type as D.U.T. 50KΩ .2µF 12V .3µF D.U.T. ...

Page 7

D.U.T + ƒ • • - • + ‚ -  • • • SD • Fig 15. Id Vgs Fig 16. Gate Charge Waveform www.irf.com Driver Gate Drive P.W. D.U.T. I Waveform SD Reverse Recovery „ Current - + ...

Page 8

IRF8736PbF SO-8 Package Outline Dimensions are shown in milimeters (inches & " YÃi !$Ãb dà IPU@T) ÃÃ9DH@ITDPIDIBÃÉÃUPG@S6I8DIBÃQ@SÃ6TH@Ã` #$H ((# !ÃÃ8PIUSPGGDIBÃ9DH@ITDPI)ÃHDGGDH@U@S "ÃÃ9DH@ITDPITÃ6S@ÃTCPXIÃDIÃHDGGDH@U@STÃbDI8C@Td #ÃÃPVUGDI@Ã8PIAPSHTÃUPÃE@9@8ÃPVUGDI@ÃHT !66 $ÃÃÃ9DH@ITDPIÃ9P@TÃIPUÃDI8GV9@ÃHPG9ÃQSPUSVTDPIT ...

Page 9

SO-8 Tape and Reel Dimensions are shown in milimeters (inches) TERMINAL NUMBER 1 8.1 ( .318 ) 7.9 ( .312 ) NOTES: 1. CONTROLLING DIMENSION : MILLIMETER. 2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS(INCHES). 3. OUTLINE CONFORMS TO EIA-481 & ...

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