IRF8736TRPBF International Rectifier, IRF8736TRPBF Datasheet - Page 4

• Manufacturer Part Number: IRF8736TRPBF
• Description: MOSFET N-CH 30V 18A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF8736TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 4.8 mOhm @ 18A, 10V
• Drain To Source Voltage (vdss): 30V
• Current - Continuous Drain (id) @ 25° C: 18A
• Vgs(th) (max) @ Id: 2.35V @ 50µA
• Gate Charge (qg) @ Vgs: 26nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 2315pF @ 15V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 6.8 mOhms
• Drain-source Breakdown Voltage: 30 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 18 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 17 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF8736TRPBFTR

IRF8736PbF
4
10000
1000
100
1000
100
Fig 5. Typical Capacitance Vs.
0.1
Fig 7. Typical Source-Drain Diode
10
1
1
0.2
Drain-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
V SD , Source-to-Drain Voltage (V)
Forward Voltage
V GS = 0V,
C iss = C gs + C gd , C ds SHORTED
C rss = C gd
C oss = C ds + C gd
T J = 150°C
0.4
Ciss
Crss
Coss
0.6
f = 1 MHZ
10
T J = 25°C
0.8
V GS = 0V
1.0
1.2
100
1000
100
0.1
Fig 8. Maximum Safe Operating Area
5
4
3
2
1
0
10
1
0
0.1
Fig 6. Typical Gate Charge Vs.
I D = 14.4A
T A = 25°C
Tj = 150°C
Single Pulse
Gate-to-Source Voltage
V DS , Drain-to-Source Voltage (V)
4
Q g , Total Gate Charge (nC)
OPERATION IN THIS AREA
LIMITED BY R DS (on)
1
V DS = 24V
V DS = 15V
8
10msec
1msec
12
100µsec
www.irf.com
10
16
20
100