SPB12N50C3 Infineon Technologies, SPB12N50C3 Datasheet
SPB12N50C3
Specifications of SPB12N50C3
SPB12N50C3
SPB12N50C3INTR
SPB12N50C3XT
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SPB12N50C3 Summary of contents
Page 1
... Reverse diode dv/dt Rev. 2.4 Ordering Code Q67040-S4641 Symbol puls jmax limited jmax limited jmax tot dv/dt Page 1 SPB12N50C3 @ T 560 V DS jmax R 0.38 DS(on) I 11.6 D PG-TO263 - Marking 12N50C3 Value SPB 11.6 7 34.8 340 0.6 11.6 ±20 ± 30 125 T -55...+150 stg 15 2005-11-07 V Ω ...
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... GS(th =500V, V =0V, V DSS DS GS =25° =150° =20V, V =0V V GSS GS DS =10V, I =7A V DS(on =25° =150° f=1MHz, open drain R G Page 2 SPB12N50C3 Value Unit 50 V/ns Values Unit min. typ. max K 3 260 °C Values Unit min. typ. max. - ...
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... I =11.6A d(off =400V, I =11. =400V, I =11.6A 10V =400V, I =11. (plateau) DD =400V, V <V T <T peak BR, DSS, j j,max. Page 3 SPB12N50C3 Values min. typ. max 1200 - 400 - =0/10V * while V is rising from 0 to 80% V oss DS while V is rising from 0 to 80% V oss ...
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... Q di /dt=100A/µ rrm di /dt =25° Unit Symbol K/W C th1 C th2 C th3 C th4 C th5 C th6 th1 th th1 th2 th,n Page 4 SPB12N50C3 Values min. typ 380 = 5 1100 Value SPB 0.0001878 0.0007106 0.000988 0.002791 0.007285 0.063 E xternal H eatsink T case Unit max. 11.6 A 34.8 1 ...
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... Power dissipation tot C SPP12N50C3 140 W 120 110 100 Safe operating area parameter : =25° 0.001 0. 0 Rev. 2.4 2 Power dissipation FullPAK tot 100 120 °C 160 Safe operating area FullPAK parameter Page 5 SPB12N50C3 ) 100 120 ) DS = 25° 0.001 0. 0 2005-11-07 °C 160 ...
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... parameter µ 20V A 10V Rev. 2.4 6 Transient thermal impedance FullPAK Z thJC parameter 0.01 10 single pulse Typ. output characteristic parameter 6.5V 6V 5. Page 6 SPB12N50C3 = 0.01 single pulse - =150° µ 20V 8V 7. 5.5V 5V 4.5V 4V ...
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... Drain-source on-state resistance R DS(on) parameter : I 2.1 Ω 1.8 1.6 6V 5.5V 1.4 1.2 0.8 0.6 0.4 6.5V 8V 0.2 20V Typ. gate charge = DS(on)max GS parameter 150° Page 7 SPB12N50C3 = SPP12N50C3 1 98% typ 0 -60 - 100 ) Gate = 11.6 A pulsed D SPP12N50C3 max 10 0 °C 180 ...
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... Avalanche SOA ≤ 150 °C par 2 Drain-source breakdown voltage V (BR)DSS 600 V 570 560 550 540 530 520 510 500 490 480 470 460 450 120 °C 160 - Page 8 SPB12N50C3 ) AR T =125° (START SPP12N50C3 - 100 2005-11-07 =25°C j (START) 4 µ °C 180 T j ...
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... Avalanche power losses parameter: E =0.6mJ AR 300 W 200 150 100 Typ. C stored energy oss oss DS 6 µ 100 200 Rev. 2.4 18 Typ. capacitances parameter 300 V 500 V DS Page 9 SPB12N50C3 ) DS =0V, f=1 MHz Ciss Coss Crss 100 200 300 V 500 V DS 2005-11-07 ...
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... Definition of diodes switching characteristics Rev. 2.4 Page 10 SPB12N50C3 2005-11-07 ...
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PG-TO263-3-2, PG-TO263-3-5, PG-TO263-3-22 Rev. 2 11-07 ...
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... Life support devices or systems are intended to be implanted in the human body support and/or maintain and sustain and/or protect human life. If they fail reasonable to assume that the health of the user or other persons may be endangered. Rev. 2.4 Page 12 SPB12N50C3 2005-11-07 ...