This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel logic Level MOSFETs are produced using Fairchild Semiconductors advanced Power Trench process that has been special tailored to minimize the on-state resistance and yet maintain superior switching performance
This N-Channel MOSFET is produced using Fairchild Semiconductors advanced Power Trench process that has been especially tailored to minimize the on-state resistance and yet maintain superior switching performance
... A/µ determined by the user's board design 45°C/W when mounted 1in pad copper Scale letter size paper and V = 10V. Package current limitation is 21A DS(on) J(max) GS Min Typ Max Units 2.3 A 0.76 1.2 V (Note 96°C/W when mounted minimum pad. FDD6690A Rev. EW) ...
... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature = 3.5V 4.0V 4.5V 5.0V 6.0V 10. DRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDD6690A Rev. EW 1.4 ...
... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 96°C 25° TIME (sec) 1 Power Dissipation R ( °C/W JA P(pk ( Duty Cycle 100 1000 FDD6690A Rev. EW) 30 100 ...
... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...