FDD6690A Fairchild Semiconductor, FDD6690A Datasheet

MOSFET N-CH 30V 12A DPAK

FDD6690A

Manufacturer Part Number
FDD6690A
Description
MOSFET N-CH 30V 12A DPAK
Manufacturer
Fairchild Semiconductor
Series
PowerTrench®r
Datasheet

Specifications of FDD6690A

Fet Type
MOSFET N-Channel, Metal Oxide
Fet Feature
Logic Level Gate
Rds On (max) @ Id, Vgs
12 mOhm @ 12A, 10V
Drain To Source Voltage (vdss)
30V
Current - Continuous Drain (id) @ 25° C
12A
Vgs(th) (max) @ Id
3V @ 250µA
Gate Charge (qg) @ Vgs
18nC @ 5V
Input Capacitance (ciss) @ Vds
1230pF @ 15V
Power - Max
1.5W
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Configuration
Single
Transistor Polarity
N-Channel
Resistance Drain-source Rds (on)
12 m Ohms
Forward Transconductance Gfs (max / Min)
47 S
Drain-source Breakdown Voltage
30 V
Gate-source Breakdown Voltage
+/- 20 V
Continuous Drain Current
46 A
Power Dissipation
3.3 W
Maximum Operating Temperature
+ 175 C
Mounting Style
SMD/SMT
Minimum Operating Temperature
- 55 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
FDD6690ATR

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FDD6690A
30V N-Channel PowerTrench MOSFET
General Description
This N-Channel MOSFET is produced using Fairchild
Semiconductor’s advanced PowerTrench process that
has been especially tailored to minimize the on state
resistance and yet maintain low gate charge for
superior switching performance.
Applications
2003 Fairchild Semiconductor Corp.
Absolute Maximum Ratings
Symbol
V
V
I
P
T
Thermal Characteristics
R
R
R
Package Marking and Ordering Information
D
DC/DC converter
Motor Drives
DSS
GSS
D
J
, T
JC
JA
JA
Device Marking
STG
FDD6690A
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current @T
Power Dissipation
Operating and Storage Junction Temperature Range
Thermal Resistance, Junction-to-Case
Thermal Resistance, Junction-to-Ambient
G
S
(TO-252)
D-PAK
TO-252
FDD6690A
Device
Parameter
@T
Pulsed
@T
@T
@T
D
C
A
C
A
A
=25°C
=25°C
=25°C
=25°C
=25°C
T
A
=25
D-PAK (TO-252)
o
C unless otherwise noted
Package
(Note 1a)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 1b)
(Note 1a)
(Note 3)
(Note 3)
(Note 1)
Features
46 A, 30 V
Low gate charge
Fast Switching Speed
High performance trench technology for extremely
low R
DS(ON)
Reel Size
13’’
R
R
–55 to +175
DS(ON)
DS(ON)
Ratings
G
100
3.3
1.5
2.7
30
46
12
56
45
96
20
= 12 m
= 14 m
Tape width
12mm
D
S
@ V
@ V
GS
GS
July 2003
= 10 V
= 4.5 V
2500 units
FDD6690A Rev EW)
Quantity
Units
C/W
W
V
V
A
C

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FDD6690A Summary of contents

Page 1

... C @T =25°C (Note 1a =25°C (Note 1b) A (Note 1) (Note 1a) (Note 1b) Package Reel Size D-PAK (TO-252) 13’’ July 2003 DS(ON 4.5 V DS(ON Ratings Units 100 W 56 3.3 1.5 –55 to +175 C 2.7 C Tape width Quantity 12mm 2500 units FDD6690A Rev EW) ...

Page 2

... A Test Conditions (Note 2) Single Pulse 12A 250 250 A,Referenced 250 250 A,Referenced 4 A,T =125 1.0 MHz mV 1.0 MHz GEN V = 15V Min Typ Max Units 180 mV 100 –5 mV 9 1230 pF 325 pF 150 pF 1 3.5 nC 5.1 nC FDD6690A Rev. EW) ...

Page 3

... A/µ determined by the user's board design 45°C/W when mounted 1in pad copper Scale letter size paper and V = 10V. Package current limitation is 21A DS(on) J(max) GS Min Typ Max Units 2.3 A 0.76 1.2 V (Note 96°C/W when mounted minimum pad. FDD6690A Rev. EW) ...

Page 4

... Figure 6. Body Diode Forward Voltage Variation with Source Current and Temperature = 3.5V 4.0V 4.5V 5.0V 6.0V 10. DRAIN CURRENT ( 125 GATE TO SOURCE VOLTAGE (V) GS Gate-to-Source Voltage 125 -55 C 0.2 0.4 0.6 0 BODY DIODE FORWARD VOLTAGE (V) SD FDD6690A Rev. EW 1.4 ...

Page 5

... Figure 10. Single Pulse Maximum 0.01 0 TIME (sec 1MHz iss C oss DRAIN TO SOURCE VOLTAGE (V) DS SINGLE PULSE R = 96°C 25° TIME (sec) 1 Power Dissipation R ( °C/W JA P(pk ( Duty Cycle 100 1000 FDD6690A Rev. EW) 30 100 ...

Page 6

... TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended exhaustive list of all such trademarks. ACEx™ FACT Quiet Series™ ActiveArray™ FAST Bottomless™ FASTr™ CoolFET™ FRFET™ CROSSVOLT™ ...

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