IRF7457TRPBF International Rectifier, IRF7457TRPBF Datasheet - Page 3

• Manufacturer Part Number: IRF7457TRPBF
• Description: MOSFET N-CH 20V 15A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7457TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3100pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10.5 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 28 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7457PBFTR; IRF7457TRPBF; IRF7457TRPBFTR

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1000
1000
100
Fig 3. Typical Transfer Characteristics
100
0.1
Fig 1. Typical Output Characteristics
10
10
1
1
2.5
0.1
TOP
BOTTOM
V
T = 150 C
V
DS
J
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
2.7V
GS
, Drain-to-Source Voltage (V)
3.0
, Gate-to-Source Voltage (V)
°
1
T = 25 C
J
3.5
2.7V
°
20µs PULSE WIDTH
T = 25 C
V
20µs PULSE WIDTH
J
DS
10
= 15V
°
4.0
100
4.5
1000
100
Fig 2. Typical Output Characteristics
10
2.0
1.5
1.0
0.5
0.0
1
0.1
-60 -40 -20
Fig 4. Normalized On-Resistance
TOP
BOTTOM
I =
D
V
15A
DS
VGS
15V
10V
7.0V
5.5V
4.5V
4.0V
3.5V
2.7V
T , Junction Temperature ( C)
J
, Drain-to-Source Voltage (V)
Vs. Temperature
0
1
IRF7457PbF
20 40 60 80 100 120 140 160
2.7V
20µs PULSE WIDTH
T = 150 C
J
10
°
V
°
GS
=
10V
3
100