IRF7457TRPBF International Rectifier, IRF7457TRPBF Datasheet - Page 5

• Manufacturer Part Number: IRF7457TRPBF
• Description: MOSFET N-CH 20V 15A 8-SOIC
• Manufacturer: International Rectifier
• Series: HEXFET®r

Specifications of IRF7457TRPBF

• Fet Type: MOSFET N-Channel, Metal Oxide
• Fet Feature: Logic Level Gate
• Rds On (max) @ Id, Vgs: 7 mOhm @ 15A, 10V
• Drain To Source Voltage (vdss): 20V
• Current - Continuous Drain (id) @ 25° C: 15A
• Vgs(th) (max) @ Id: 3V @ 250µA
• Gate Charge (qg) @ Vgs: 42nC @ 4.5V
• Input Capacitance (ciss) @ Vds: 3100pF @ 10V
• Power - Max: 2.5W
• Mounting Type: Surface Mount
• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Polarity: N-Channel
• Resistance Drain-source Rds (on): 10.5 mOhms
• Drain-source Breakdown Voltage: 20 V
• Gate-source Breakdown Voltage: 20 V
• Continuous Drain Current: 15 A
• Power Dissipation: 2.5 W
• Mounting Style: SMD/SMT
• Gate Charge Qg: 28 nC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: IRF7457PBFTR; IRF7457TRPBF; IRF7457TRPBFTR

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16
13
10
6
3
0
25
Fig 9. Maximum Drain Current Vs.
0.01
100
0.1
10
0.00001
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
50
T , Case Temperature ( C)
Case Temperature
C
(THERMAL RESPONSE)
0.0001
75
SINGLE PULSE
100
0.001
125
°
t , Rectangular Pulse Duration (sec)
1
0.01
150
Fig 10b. Switching Time Waveforms
Fig 10a. Switching Time Test Circuit
0.1
V
90%
10%
V
DS
GS
1. Duty factor D = t / t
2. Peak T = P
Notes:
t
d(on)
1
J
t
r
DM
≤ 0.1 %
≤ 1
IRF7457PbF
x Z
1
thJA
P
2
DM
+ T
10
A
t
1
t
d(off)
t
2
t
f
100
+
-
5