SPU08P06P Infineon Technologies, SPU08P06P Datasheet

MOSFET P-CH 60V 8.83A TO-251

SPU08P06P

Manufacturer Part Number
SPU08P06P
Description
MOSFET P-CH 60V 8.83A TO-251
Manufacturer
Infineon Technologies
Series
SIPMOS®r
Datasheet

Specifications of SPU08P06P

Fet Type
MOSFET P-Channel, Metal Oxide
Fet Feature
Standard
Rds On (max) @ Id, Vgs
300 mOhm @ 6.2A, 10V
Drain To Source Voltage (vdss)
60V
Current - Continuous Drain (id) @ 25° C
8.83A
Vgs(th) (max) @ Id
4V @ 250µA
Gate Charge (qg) @ Vgs
13nC @ 10V
Input Capacitance (ciss) @ Vds
420pF @ 25V
Power - Max
42W
Mounting Type
Through Hole
Package / Case
IPak, TO-251, DPak (3 straight short leads + tab)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
SP000012086
SPU08P06PIN
SPU08P06PX
SPU08P06PXTIN
SPU08P06PXTIN

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
SPU08P06P
Manufacturer:
INFINEON
Quantity:
12 500
Company:
Part Number:
SPU08P06P
Quantity:
1 040
Rev 1.6
Features
• P-Channel
• Enhancement mode
• Avalanche rated
• dv /dt rated
• 175°C operating temperature
• Pb-free lead finishing; RoHS compliant
Parameter
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, periodic limited by
T
Reverse diode dv /dt
Gate source voltage
Power dissipation
Operating and storage temperature
ESD class
Soldering temperature
IEC climatic category; DIN IEC 68-1
SIPMOS
Type
SPU08P06P PG-TO251-3
SPD08P06P PG-TO252-3
jmax
®
Power-Transistor
Package
Tape and reel information
Symbol Conditions
I
I
E
E
dv /dt
V
P
T
D
D,pulse
j
AS
AR
GS
tot
, T
stg
T
T
T
I
I
di /dt =-200 A/µs,
T
T
D
D
page 1
A
A
A
j,max
A
=8.83 A, R
=8.83 A, V
=25 °C
=100 °C
=25 °C
=25 °C
=175 °C
PG-TO252-3
DS
GS
Product Summary
V
R
I
D
=48 V,
=25 Ω
DS
DS(on),max
Marking
4.2
Lead free
Yes
Yes
steady state
"-55 ... +175"
55/175/56
260 °C
PG-TO251-3
-35.32
Value
-8.83
-6.25
±20
70
42
-6
SPD08P06P G
Packing
-8.8
0.3
-60
Unit
A
mJ
kV/µs
V
W
°C
V
A
2008-02-18

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SPU08P06P Summary of contents

Page 1

... Enhancement mode • Avalanche rated • dv /dt rated • 175°C operating temperature • Pb-free lead finishing; RoHS compliant Type Package SPU08P06P PG-TO251-3 SPD08P06P PG-TO252-3 Parameter Continuous drain current Pulsed drain current Avalanche energy, single pulse Avalanche energy, periodic limited by ...

Page 2

Parameter Thermal characteristics Thermal resistance, junction - case Thermal resistance, junction - ambient,leaded SMD version, device on PCB: Electrical characteristics Static characteristics Drain-source breakdown voltage Gate threshold voltage Zero gate voltage drain current Gate-source leakage current Drain-source on-state ...

Page 3

Parameter Dynamic characteristics Input capacitance Output capacitance Reverse transfer capacitance Turn-on delay time Rise time Turn-off delay time Fall time Gate Charge Characteristics Gate to source charge Gate to drain charge Gate charge total Gate plateau voltage Reverse Diode Diode ...

Page 4

Power dissipation P =f(T ) tot Safe operating area I =f =25 ° parameter limited by on-state ...

Page 5

Typ. output characteristics I =f =25 ° parameter - - Typ. transfer characteristics I =f ...

Page 6

Drain-source on-state resistance R =f =-6 DS(on 700 600 500 400 300 200 typ. 100 0 -60 - Typ. capacitances C =f MHz ...

Page 7

Avalanche characteristics =25 Ω parameter: T j(start Drain-source breakdown voltage V =f =-250 µA BR(DSS ...

Page 8

... Infineon Technologies Office. Infineon Technologies components may be used in life-support devices or systems only with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system ...

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